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Electronic transport characterization of B+ ion-implanted silicon wafers with nonlinear photocarrier radiometry
Journal of Applied Physics
◽
10.1063/1.5133668
◽
2020
◽
Vol 127
(3)
◽
pp. 035701
◽
Cited By ~ 3
Author(s):
Xiaoke Lei
◽
Bincheng Li
◽
Qiming Sun
◽
Jing Wang
◽
Chunming Gao
Keyword(s):
Electronic Transport
◽
Silicon Wafers
◽
Photocarrier Radiometry
◽
Ion Implanted
Download Full-text
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Cited By
References
Influence of Nonlinearity on Electronic Transport Characterization of Ion-Implanted Silicon Wafers with Photocarrier Radiometry
International Journal of Thermophysics
◽
10.1007/s10765-019-2578-1
◽
2019
◽
Vol 41
(1)
◽
Cited By ~ 1
Author(s):
Xiaoke Lei
◽
Bincheng Li
◽
Qiming Sun
◽
Jing Wang
◽
Chunming Gao
Keyword(s):
Electronic Transport
◽
Silicon Wafers
◽
Photocarrier Radiometry
◽
Ion Implanted
Download Full-text
Accurate electronic transport characterization of B+ ion-implanted silicon wafers with self-normalized nonlinear photocarrier radiometry
Infrared Physics & Technology
◽
10.1016/j.infrared.2020.103533
◽
2020
◽
Vol 111
◽
pp. 103533
Author(s):
Xiaoke Lei
◽
Bincheng Li
◽
Qiming Sun
◽
Jing Wang
◽
Chunming Gao
◽
...
Keyword(s):
Electronic Transport
◽
Silicon Wafers
◽
Photocarrier Radiometry
◽
Ion Implanted
Download Full-text
Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry
Journal of Applied Physics
◽
10.1063/1.3536620
◽
2011
◽
Vol 109
(2)
◽
pp. 023708
◽
Cited By ~ 9
Author(s):
Qiuping Huang
◽
Bincheng Li
Keyword(s):
Electronic Transport
◽
Free Carrier
◽
Silicon Wafers
◽
Free Carrier Absorption
◽
Photocarrier Radiometry
◽
Carrier Absorption
Download Full-text
Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
Chinese Physics B
◽
10.1088/1674-1056/22/5/057202
◽
2013
◽
Vol 22
(5)
◽
pp. 057202
◽
Cited By ~ 1
Author(s):
Sheng-Dong Ren
◽
Bin-Cheng Li
◽
Li-Feng Gao
◽
Qian Wang
Keyword(s):
Time Domain
◽
Silicon Wafers
◽
Photocarrier Radiometry
◽
Ion Implanted
Download Full-text
Electronic transport characterization of silicon wafers by laterally resolved free-carrier absorption and multiparameter fitting
Applied Physics Letters
◽
10.1063/1.2354006
◽
2006
◽
Vol 89
(11)
◽
pp. 112120
◽
Cited By ~ 25
Author(s):
Xiren Zhang
◽
Bincheng Li
◽
Chunming Gao
Keyword(s):
Electronic Transport
◽
Free Carrier
◽
Silicon Wafers
◽
Free Carrier Absorption
◽
Carrier Absorption
Download Full-text
Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers
Chinese Physics B
◽
10.1088/1674-1056/19/9/097201
◽
2010
◽
Vol 19
(9)
◽
pp. 097201
◽
Cited By ~ 12
Author(s):
Liu Xian-Ming
◽
Li Bin-Cheng
◽
Huang Qiu-Ping
Keyword(s):
Thermal Annealing
◽
Silicon Wafers
◽
Photocarrier Radiometry
◽
Ion Implanted
Download Full-text
Photoelectronic characterization of n-type silicon wafers using photocarrier radiometry
Physica B Condensed Matter
◽
10.1016/j.physb.2011.06.073
◽
2011
◽
Vol 406
(19)
◽
pp. 3687-3693
◽
Cited By ~ 3
Author(s):
A. Gutiérrez
◽
M.E. Rodríguez-García
◽
J. Giraldo
Keyword(s):
Silicon Wafers
◽
Photocarrier Radiometry
◽
Type Silicon
Download Full-text
Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers
Journal of Applied Physics
◽
10.1063/1.1755847
◽
2004
◽
Vol 96
(1)
◽
pp. 186-196
◽
Cited By ~ 32
Author(s):
Bincheng Li
◽
Derrick Shaughnessy
◽
Andreas Mandelis
◽
Jerias Batista
◽
Jose Garcia
Keyword(s):
Transport Properties
◽
Electronic Transport
◽
Silicon Wafers
◽
Radiometric Measurement
◽
Electronic Transport Properties
◽
Ion Implanted
Download Full-text
Three-layer photocarrier radiometry model of ion-implanted silicon wafers
Journal of Applied Physics
◽
10.1063/1.1748862
◽
2004
◽
Vol 95
(12)
◽
pp. 7832-7840
◽
Cited By ~ 28
Author(s):
Bincheng Li
◽
Derrick Shaughnessy
◽
Andreas Mandelis
◽
Jerias Batista
◽
Jose Garcia
Keyword(s):
Silicon Wafers
◽
Photocarrier Radiometry
◽
Ion Implanted
Download Full-text
Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations
Journal of Applied Physics
◽
10.1063/1.4716032
◽
2012
◽
Vol 111
(9)
◽
pp. 093729
◽
Cited By ~ 4
Author(s):
Qiuping Huang
◽
Bincheng Li
Keyword(s):
Silicon Wafers
◽
Photocarrier Radiometry
◽
Multiple Wavelength
◽
Ion Implanted
Download Full-text
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