scholarly journals The effects of carbon incorporation on the refractive index of PECVD silicon oxide layers

AIP Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 045331
Author(s):  
Benjamin Torda ◽  
Lazhar Rachdi ◽  
Asmaa Mohamed Okasha Mohamed Okasha ◽  
Pierre Saint-Cast ◽  
Marc Hofmann
Keyword(s):  
Refractive Index ◽  
Silicon Oxide ◽  
Carbon Incorporation ◽  
Oxide Layers

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

Refractive index of silicon oxide surface films determined by polarization method of photomagnetoelectric investigation

1984 ◽  
Vol 140 (2) ◽  
pp. 446-454 ◽  
Author(s):  
M. Nowak ◽  
S. Łoś ◽  
S. Kończak
Keyword(s):  
Refractive Index ◽  
Silicon Oxide ◽  
Oxide Surface ◽  
Surface Films ◽  
Polarization Method

Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100)

1989 ◽  
Vol 39 (8) ◽  
pp. 5070-5078 ◽  
Author(s):  
M. O. Aboelfotoh
Keyword(s):  
Schottky Barrier ◽  
Silicon Oxide ◽  
Oxide Layers

Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers

2015 ◽  
Vol 44 (8) ◽  
pp. 523-530 ◽  
Author(s):  
G. Ya. Krasnikov ◽  
N. A. Zaitsev ◽  
I. V. Matyushkin ◽  
S. V. Korobov
Keyword(s):  
Phase Separation ◽  
Cellular Automaton ◽  
Silicon Oxide ◽  
Cellular Automaton Model ◽  
Oxide Layers

Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon

2010 ◽  
Vol 159 ◽  
pp. 163-166 ◽  
Author(s):  
S. Alexandrova ◽  
A. Szekeres
Keyword(s):  
Refractive Index ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxide Thickness ◽  
Hydrogenated Silicon ◽  
Oxide Structure ◽  
Interface Parameters

In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thickness was found, below which the oxide structure is different from SiO2, most probably SiOх. It is related to a modified Si surface during the pre-oxidation plasma treatment and its value depends on Si orientation and pre-clean conditions. A characteristic oxide thickness of 13 nm was found for Si hydrogenated without heating and, of 9 nm for Si hydrogenated at 300oC.

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

scholarly journals Experimental studies of thorium ion implantation from pulse laser plasma into thin silicon oxide layers

2018 ◽  
Vol 15 (5) ◽  
pp. 056101 ◽  
Author(s):  
P V Borisyuk ◽  
E V Chubunova ◽  
Yu Yu Lebedinskii ◽  
E V Tkalya ◽  
O S Vasilyev ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Pulse Laser ◽  
Laser Plasma ◽  
Silicon Oxide ◽  
Experimental Studies ◽  
Oxide Layers ◽  
Thin Silicon

A new method for the growth of silicon oxide layers below 300°C by use of catalytic activity of platinum overlayers

1997 ◽  
Vol 108 (4) ◽  
pp. 433-438 ◽  
Author(s):  
H Kobayashi ◽  
Y Yamashita ◽  
K Namba ◽  
Y Todokoro
Keyword(s):  
Catalytic Activity ◽  
Silicon Oxide ◽  
New Method ◽  
Oxide Layers

Thermal desorption of ultrathin silicon oxide layers on Si(111)

2000 ◽  
Vol 15 (2) ◽  
pp. 160-163 ◽  
Author(s):  
A Iraji-zad ◽  
N Taghavinia ◽  
M Ahadian ◽  
A Mashaei
Keyword(s):  
Thermal Desorption ◽  
Silicon Oxide ◽  
Oxide Layers
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