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Measurement of interface recombination velocity in (Pb,Sn)Te/PbTe double‐heterostructure laser diodes
Applied Physics Letters
◽
10.1063/1.90825
◽
1979
◽
Vol 34
(7)
◽
pp. 432-434
◽
Cited By ~ 24
Author(s):
Dumrong Kasemset
◽
Clifton G. Fonstad
Keyword(s):
Laser Diodes
◽
Double Heterostructure
◽
Interface Recombination
◽
Heterostructure Laser
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
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Cited By
References
The influence of sodium on the molybdenum/Cu(In,Ga)Se2 interface recombination velocity, determined by time resolved photoluminescence
Applied Physics Letters
◽
10.1063/1.4928187
◽
2015
◽
Vol 107
(5)
◽
pp. 051601
◽
Cited By ~ 10
Author(s):
Enrico Jarzembowski
◽
Frank Syrowatka
◽
Kai Kaufmann
◽
Wolfgang Fränzel
◽
Torsten Hölscher
◽
...
Keyword(s):
Time Resolved
◽
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
◽
Time Resolved Photoluminescence
Download Full-text
Interface recombination velocity and lifetime in GaAs and AlGaAs/GaAs structures
Solid-State Electronics
◽
10.1016/0038-1101(90)90186-i
◽
1990
◽
Vol 33
(6)
◽
pp. 733-736
◽
Cited By ~ 6
Author(s):
J.M. Borrego
◽
S.K. Ghandhi
Keyword(s):
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
On the Si/SiO2 Interface Recombination Velocity
Insulating Films on Semiconductors
◽
10.1007/978-3-642-68247-6_7
◽
1981
◽
pp. 43-47
Author(s):
M. W. Hillen
◽
J. Holsbrink
◽
J. F. Verwey
Keyword(s):
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
High Mobility and Low Interface Recombination Velocity GaAs/Al/sub x/Ga/sub 1-x/As Heterointerfaces Grown by MOVPE
Sixth International Conference Metalorganic Vapor Phase Epitaxy
◽
10.1109/movpe.1992.664968
◽
2005
◽
Author(s):
T.F. Kuech
◽
D.J. Wolford
◽
G.D. Gilliland
◽
J.A. Bradley
Keyword(s):
High Mobility
◽
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides
Applied Physics Letters
◽
10.1063/1.2760133
◽
2007
◽
Vol 91
(4)
◽
pp. 041112
◽
Cited By ~ 12
Author(s):
A. Trita
◽
I. Cristiani
◽
V. Degiorgio
◽
D. Chrastina
◽
H. von Känel
Keyword(s):
Carrier Lifetime
◽
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1−xTe double-heterostructures
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
◽
10.1109/pvsc.2016.7750047
◽
2016
◽
Author(s):
Xin-Hao Zhao
◽
Shi Liu
◽
Calli M. Campbell
◽
Yuan Zhao
◽
Maxwell B. Lassise
◽
...
Keyword(s):
Interface Recombination
◽
Double Heterostructures
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
Diffusion length and interface recombination velocity measurement of a GaAs solar cell using two emitter fabrications and quantum yield
Solar Cells
◽
10.1016/0379-6787(90)90056-b
◽
1990
◽
Vol 28
(3)
◽
pp. 223-232
◽
Cited By ~ 6
Author(s):
L.D. Partain
◽
D.D. Liu
◽
M.S. Kuryla
◽
R.K. Ahrenkiel
◽
S.E. Asher
Keyword(s):
Solar Cell
◽
Quantum Yield
◽
Velocity Measurement
◽
Diffusion Length
◽
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity
Applied Physics Letters
◽
10.1063/1.114034
◽
1995
◽
Vol 66
(5)
◽
pp. 625-627
◽
Cited By ~ 40
Author(s):
M. Passlack
◽
M. Hong
◽
E. F. Schubert
◽
J. R. Kwo
◽
J. P. Mannaerts
◽
...
Keyword(s):
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
Reducing the impact of charge carrier induced absorption in organic double heterostructure laser diodes
2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference
◽
10.1109/cleoe-iqec.2007.4386169
◽
2007
◽
Author(s):
Christian Gartner
◽
Christian Karnutsch
◽
Uli Lemmer
Keyword(s):
Charge Carrier
◽
Laser Diodes
◽
Induced Absorption
◽
Double Heterostructure
◽
Heterostructure Laser
◽
The Impact
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Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor‐phase epitaxy
Journal of Applied Physics
◽
10.1063/1.341298
◽
1988
◽
Vol 64
(8)
◽
pp. 4253-4256
◽
Cited By ~ 33
Author(s):
L. W. Molenkamp
◽
H. F. J. van’t Blik
Keyword(s):
Vapor Phase
◽
Vapor Phase Epitaxy
◽
Organometallic Vapor Phase Epitaxy
◽
Interface Recombination
◽
Interface Recombination Velocity
◽
Recombination Velocity
Download Full-text
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