Ion bombardment control of morphology during the growth of hydrogenated amorphous silicon thin films by reactive ion beam deposition

1983 ◽  
Vol 42 (1) ◽  
pp. 36-38 ◽  
Author(s):  
A. Kasdan ◽  
D. P. Goshorn
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Ion Beam ◽  
Hydrogenated Amorphous Silicon ◽  
Ion Bombardment ◽  
Ion Beam Deposition ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous ◽  
Beam Deposition

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

Charge Assisted Deposition of Polycrystalline Silicon Thin Films by Cesium Sputter Ion Beam Deposition

2004 ◽  
Vol 43 (10) ◽  
pp. 6880-6883 ◽  
Author(s):  
Deuk Yeon Lee ◽  
Yong Hwan Kim ◽  
In Kyo Kim ◽  
Dong Joon Choi ◽  
Soon Moon Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Silicon Thin Films ◽  
Beam Deposition
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