Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy

1986 ◽  
Vol 25 (Part 1, No. 4) ◽  
pp. 652-653 ◽  
Author(s):  
Ryoichi Fukasawa ◽  
Moriaki Wakaki ◽  
Kimihiro Ohta ◽  
Hajime Okumura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Carrier Concentration ◽  
Molecular Beam ◽  
Free Carrier ◽  
Depletion Layer ◽  
Free Carrier Concentration ◽  
Surface Depletion

Determination of free carrier concentration inn‐GaInP alloy by Raman scattering

1995 ◽  
Vol 78 (4) ◽  
pp. 2515-2519 ◽  
Author(s):  
K. Sinha ◽  
A. Mascarenhas ◽  
Sarah R. Kurtz ◽  
J. M. Olson
Keyword(s):  
Raman Scattering ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration

Mapping of Donor Impurities in Gan By Raman Imaging

1996 ◽  
Vol 449 ◽  
Author(s):  
F. A. Ponce ◽  
J. W. Steeds ◽  
C. D. Dyer ◽  
G. D. Pitt
Keyword(s):  
Raman Scattering ◽  
Spatial Variation ◽  
Carrier Concentration ◽  
Raman Line ◽  
Free Carrier ◽  
Raman Imaging ◽  
Free Carrier Concentration ◽  
Lattice Vibrations ◽  
Silicon Doped ◽  
Preferential Incorporation

ABSTRACTRaman scattering experiments on silicon-doped GaN show that donor impurities quench the Al(LO) Raman line at 735 cm−1. This is due to interaction between lattice vibrations and the free carrier plasma. The spatial variation of the Al(LO) signal has been imaged directly using newly developed instrumentation. Features with dimension under on micron are observed in faceted GaN crystallites. The variation in free carrier concentration is attributed to preferential incorporation of donor impurities during growth.

Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique

2008 ◽  
Vol 34 (1) ◽  
pp. 37-39 ◽  
Author(s):  
O. S. Komkov ◽  
A. N. Pikhtin ◽  
Yu. V. Zhilyaev ◽  
L. M. Fedorov
Keyword(s):  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration

Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy

2014 ◽  
Vol 16 (9) ◽  
pp. 094010 ◽  
Author(s):  
Eugenio Calandrini ◽  
Michele Ortolani ◽  
Alessandro Nucara ◽  
Giordano Scappucci ◽  
Wolfgang M Klesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Carrier Concentration ◽  
Atomic Layer ◽  
Free Carrier ◽  
Free Carrier Concentration
Sign in / Sign up

Export Citation Format

Share Document