Mapping of Donor Impurities in Gan By Raman Imaging

ABSTRACTRaman scattering experiments on silicon-doped GaN show that donor impurities quench the Al(LO) Raman line at 735 cm−1. This is due to interaction between lattice vibrations and the free carrier plasma. The spatial variation of the Al(LO) signal has been imaged directly using newly developed instrumentation. Features with dimension under on micron are observed in faceted GaN crystallites. The variation in free carrier concentration is attributed to preferential incorporation of donor impurities during growth.

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Raman scattering determination of free‐carrier concentration and surface space‐charge layer in 〈100〉n‐GaAs

Applied Physics Letters ◽

10.1063/1.95967 ◽

1985 ◽

Vol 47 (8) ◽

pp. 891-893 ◽

Cited By ~ 36

Author(s):

H. Shen ◽

Fred H. Pollak ◽

R. N. Sacks

Keyword(s):

Raman Scattering ◽

Space Charge ◽

Carrier Concentration ◽

Free Carrier ◽

Space Charge Layer ◽

Free Carrier Concentration ◽

Charge Layer

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Raman scattering measurement of the free‐carrier concentration and of the impurity location in boron‐implanted silicon

Journal of Applied Physics ◽

10.1063/1.323876 ◽

1977 ◽

Vol 48 (4) ◽

pp. 1548-1550 ◽

Cited By ~ 18

Author(s):

R. Beserman ◽

T. Bernstein

Keyword(s):

Raman Scattering ◽

Carrier Concentration ◽

Free Carrier ◽

Free Carrier Concentration ◽

Scattering Measurement

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Free-carrier concentration in n-doped InP crystals determined by Raman scattering measurements

Applied Surface Science ◽

10.1016/0169-4332(91)90185-m ◽

1991 ◽

Vol 50 (1-4) ◽

pp. 295-299 ◽

Cited By ~ 17

Author(s):

B. Boudart ◽

B. Prévot ◽

C. Schwab

Keyword(s):

Raman Scattering ◽

Carrier Concentration ◽

Free Carrier ◽

Free Carrier Concentration ◽

Scattering Measurements

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Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.652 ◽

1986 ◽

Vol 25 (Part 1, No. 4) ◽

pp. 652-653 ◽

Cited By ~ 12

Author(s):

Ryoichi Fukasawa ◽

Moriaki Wakaki ◽

Kimihiro Ohta ◽

Hajime Okumura

Keyword(s):

Molecular Beam Epitaxy ◽

Raman Scattering ◽

Carrier Concentration ◽

Molecular Beam ◽

Free Carrier ◽

Depletion Layer ◽

Free Carrier Concentration ◽

Surface Depletion

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Raman Scattering Measurement of the Free-Carrier Concentration in AlxGa1-xAs

10.7567/ssdm.1983.b-3-8 ◽

1983 ◽

Author(s):

T. Yuasa ◽

S. Naritsuka ◽

M. Mannoh ◽

K. Shinozaki ◽

K. Yamanaka ◽

...

Keyword(s):

Raman Scattering ◽

Carrier Concentration ◽

Free Carrier ◽

Free Carrier Concentration ◽

Scattering Measurement

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Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration

Chinese Physics Letters ◽

10.1088/0256-307x/24/8/025 ◽

2007 ◽

Vol 24 (8) ◽

pp. 2245-2248 ◽

Cited By ~ 4

Author(s):

M Singh ◽

P Aghamkar ◽

P. K Sen

Keyword(s):

Magnetic Field ◽

Raman Scattering ◽

Carrier Concentration ◽

Stimulated Raman Scattering ◽

Free Carrier ◽

Free Carrier Concentration ◽

Dc Magnetic Field ◽

Stimulated Raman

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Легированный кремнием GaSb, выращенный методом ГФЭМОС в широком диапазоне соотношений V/III

Физика и техника полупроводников ◽

10.21883/ftp.2021.10.51447.9678 ◽

2021 ◽

Vol 55 (10) ◽

pp. 931

Author(s):

Р.В. Левин ◽

А.С. Власов ◽

Б.В. Пушный

Keyword(s):

Raman Scattering ◽

Carrier Concentration ◽

Vapor Phase ◽

Free Carrier ◽

Free Carrier Concentration ◽

X Ray Diffraction ◽

X Ray ◽

Organic Vapor ◽

Metal Organic ◽

Si Doped

Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH4 flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.

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