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Low threshold current AlGaAs/GaAs distributed feedback laser grown by two‐step molecular beam epitaxy
Applied Physics Letters
◽
10.1063/1.96074
◽
1985
◽
Vol 47
(6)
◽
pp. 570-572
◽
Cited By ~ 9
Author(s):
Keisuke Kojima
◽
Susumu Noda
◽
Kazumasa Mitsunaga
◽
Kazuo Kyuma
◽
Takashi Nakayama
Keyword(s):
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Threshold Current
◽
Distributed Feedback
◽
Distributed Feedback Laser
◽
Low Threshold
Download Full-text
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Cited By
References
Low-threshold current AlGaAs/GaAs-distributed feedback laser grown by two-step molecular beam epitaxy
Journal of Lightwave Technology
◽
10.1109/jlt.1986.1074755
◽
1986
◽
Vol 4
(5)
◽
pp. 507-512
◽
Cited By ~ 4
Author(s):
K. Kojima
◽
S. Noda
◽
K. Mitsunaga
◽
K. Kyuma
◽
T. Nakayama
Keyword(s):
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Threshold Current
◽
Distributed Feedback
◽
Distributed Feedback Laser
◽
Low Threshold
Download Full-text
Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy
Electronics Letters
◽
10.1049/el:19880364
◽
1988
◽
Vol 24
(9)
◽
pp. 537
Author(s):
B. Saint-Cricq
◽
F. Chatenoud
◽
F. Lozes-Dupuy
◽
S. Fourtine
◽
H. Martinot
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Well
◽
Current Density
◽
Molecular Beam
◽
Threshold Current
◽
Threshold Current Density
◽
Quantum Well Lasers
◽
Single Quantum
◽
Single Quantum Well
◽
Low Threshold
Download Full-text
Molecular beam epitaxy growth of lattice-matched multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
Journal of Crystal Growth
◽
10.1016/0022-0248(95)80153-4
◽
1995
◽
Vol 150
◽
pp. 1323-1327
◽
Cited By ~ 2
Author(s):
H. Künzel
◽
J. Böttcher
◽
A. Hase
◽
V. Hofsäss
◽
C. Kaden
◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Well
◽
Molecular Beam
◽
Multiple Quantum Well
◽
Distributed Feedback
◽
Molecular Beam Epitaxy Growth
◽
Multiple Quantum
◽
Distributed Feedback Laser
◽
Lattice Matched
Download Full-text
Low threshold current density 1.3 [micro sign]m InAs∕InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
Electronics Letters
◽
10.1049/el:20040127
◽
2004
◽
Vol 40
(3)
◽
pp. 179
◽
Cited By ~ 7
Author(s):
F.Y. Chang
◽
J.D. Lee
◽
H.H. Lin
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Dot
◽
Current Density
◽
Molecular Beam
◽
Threshold Current
◽
Threshold Current Density
◽
Quantum Dot Lasers
◽
Gas Source
◽
Low Threshold
◽
Cladding Layers
Download Full-text
Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy
ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings
◽
10.1109/smelec.1996.616475
◽
2002
◽
Author(s):
C.Y. Li
◽
D.H. Zhang
◽
S.F. Yoon
Keyword(s):
Molecular Beam Epitaxy
◽
Constant Temperature
◽
Molecular Beam
◽
Threshold Current
◽
Cavity Surface
◽
Vertical Cavity Surface
◽
Surface Emitting Laser
◽
Low Threshold
◽
Vertical Cavity
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Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy
Applied Physics Letters
◽
10.1063/1.105098
◽
1991
◽
Vol 58
(17)
◽
pp. 1816-1818
◽
Cited By ~ 75
Author(s):
R. L. Williams
◽
M. Dion
◽
F. Chatenoud
◽
K. Dzurko
Keyword(s):
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Threshold Current
◽
Low Threshold
Download Full-text
1.5 μm wavelength compressively strained GaInAs/AlGaInAs multiquantum‐well lasers grown by molecular‐beam epitaxy with high differential gain and low threshold current density
Applied Physics Letters
◽
10.1063/1.114532
◽
1995
◽
Vol 67
(4)
◽
pp. 449-451
◽
Cited By ~ 1
Author(s):
H. Shimizu
◽
T. Fukushima
◽
K. Nishikata
◽
Y. Hirayama
◽
M. Irikawa
Keyword(s):
Molecular Beam Epitaxy
◽
Current Density
◽
Molecular Beam
◽
Threshold Current
◽
Threshold Current Density
◽
Differential Gain
◽
Low Threshold
◽
Multiquantum Well
Download Full-text
Low threshold current GaAs/AlGaAs GRIN-SCH lasers grown by molecular beam epitaxy on Si3N4 masked substrates
Electronics Letters
◽
10.1049/el:19880764
◽
1988
◽
Vol 24
(18)
◽
pp. 1123
◽
Cited By ~ 2
Author(s):
H.P. Meier
◽
E. van Gieson
◽
W. Walter
◽
C. Harder
◽
P. Buchmann
◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Threshold Current
◽
Low Threshold
Download Full-text
Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy
Electronics Letters
◽
10.1049/el:20093066
◽
2009
◽
Vol 45
(1)
◽
pp. 50
◽
Cited By ~ 4
Author(s):
D. Zhou
◽
R. Piron
◽
M. Dontabactouny
◽
O. Dehaese
◽
F. Grillot
◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
Current Density
◽
Molecular Beam
◽
Threshold Current
◽
Threshold Current Density
◽
Quantum Dash
◽
Low Threshold
Download Full-text
Low Threshold Current InGaAs/InGaAlAs MQW Lasers Grown by Gas Source Molecular Beam Epitaxy
10.7567/ssdm.1991.ld-8-2
◽
1991
◽
Author(s):
Y. Kawamura
◽
A. Wakatsuki
◽
Y. Noguchi
◽
H. Iwamura
Keyword(s):
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Threshold Current
◽
Gas Source
◽
Low Threshold
Download Full-text
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