Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy

2002 ◽  
Author(s):  
C.Y. Li ◽  
D.H. Zhang ◽  
S.F. Yoon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Constant Temperature ◽  
Molecular Beam ◽  
Threshold Current ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

Single-transverse mode, low threshold current vertical-cavity surface-emitting laser

1993 ◽  
Vol 40 (11) ◽  
pp. 2116-2117 ◽  
Author(s):  
Y.A. Wu ◽  
C.J. Chang-Hasnain ◽  
G.S. Li ◽  
R. Nabiev ◽  
C. Caneau ◽  
...  
Keyword(s):  
Transverse Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure

1996 ◽  
Author(s):  
Zhongqi Pan ◽  
Yongzhen Huang ◽  
Rong Han Wu ◽  
Zengqi Zhou ◽  
Yaowang Ling ◽  
...  
Keyword(s):  
Threshold Current ◽  
Cavity Surface ◽  
Mesa Structure ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Low Threshold ◽  
Vertical Cavity

Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates

1996 ◽  
Vol 35 (Part 2, No. 2A) ◽  
pp. L150-L153 ◽  
Author(s):  
Yoshihiko Hanamaki ◽  
Yoshiyuki Watanuki ◽  
Hidefumi Akiyama ◽  
Tetsuya Takeuchi ◽  
Nagaatsu Ogasawara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Cavity Surface ◽  
Gaas Substrates ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation
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