1.5 μm wavelength compressively strained GaInAs/AlGaInAs multiquantum‐well lasers grown by molecular‐beam epitaxy with high differential gain and low threshold current density

1995 ◽  
Vol 67 (4) ◽  
pp. 449-451 ◽  
Author(s):  
H. Shimizu ◽  
T. Fukushima ◽  
K. Nishikata ◽  
Y. Hirayama ◽  
M. Irikawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Differential Gain ◽  
Low Threshold ◽  
Multiquantum Well

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

2009 ◽  
Vol 45 (1) ◽  
pp. 50 ◽  
Author(s):  
D. Zhou ◽  
R. Piron ◽  
M. Dontabactouny ◽  
O. Dehaese ◽  
F. Grillot ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dash ◽  
Low Threshold
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