scholarly journals Phase selection during pulsed laser annealing of manganese

1986 ◽  
Vol 48 (5) ◽  
pp. 338-340 ◽  
Author(s):  
D. M. Follstaedt ◽  
P. S. Peercy ◽  
J. H. Perepezko
1986 ◽  
Vol 74 ◽  
Author(s):  
J. H. Perepezko ◽  
D. M. Follstaedt ◽  
P. S. Peercy

AbstractPulsed laser melting of the low-temperature σ (tetragonal, D8b) phase has been used to generate a liquid undercooled with respect to the melting point of the higher-temperature, equilibrium α (bcc) solid solution in equiatomic Fe-V alloys. From calculations based on reported thermodynamic data and equilibrium transformation temperatures, the metastable melting point of the σ phase is about 1720 K for an Fe-50 at.% V alloy, which is 54 K below the melting temperature of the α phase. During rapid heating of well-annealed σ-phase material with a 30 ns laser pulse to above melt threshold, the σ → α reaction is suppressed, so that the melt zone is undercooled by ∼ 54 K with respect to the equilibrium α phase. The α phase nucleates from the undercooled molten surface layer and is retained during the subsequent rapid cooling (∼ 1010 K/s) because of the relatively sluggish α → σ transformation. X-ray diffraction (Read camera) and TEM identified the α phase in the near-surface after melting σ with incident laser energies (1.0–1.41 J/cm2) which are well above the melt threshold as determined by changes in reflectivity (∼ 0.7 J/cm2). The α phase nucleated from the undercooled liquid within ∼ 20 ns.


1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  

Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  

2001 ◽  
Vol 328 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
D. Klinger ◽  
M. Lefeld-Sosnowska ◽  
J. Auleytner ◽  
D. Żymierska ◽  
L. Nowicki ◽  
...  

1982 ◽  
Vol 41 (4) ◽  
pp. 321-324 ◽  
Author(s):  
B. Stritzker ◽  
B.R. Appleton ◽  
C.W. White ◽  
S.S. Lau

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.


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