Temperature‐dependent optical spectra of single quantum wells fabricated using interrupted molecular beam epitaxial growth

1986 ◽  
Vol 49 (21) ◽  
pp. 1465-1467 ◽  
Author(s):  
Emil S. Koteles ◽  
B. S. Elman ◽  
C. Jagannath ◽  
Y. J. Chen
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Optical Spectra ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells

1989 ◽  
Vol 55 (25) ◽  
pp. 2611-2613 ◽  
Author(s):  
D. J. Arent ◽  
S. Nilsson ◽  
Y. D. Galeuchet ◽  
H. P. Meier ◽  
W. Walter
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Quantum ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth and photoluminescence of PbS-PbCdSSe single quantum wells

1989 ◽  
Vol 95 (1-4) ◽  
pp. 599-602 ◽  
Author(s):  
S. Hashimoto ◽  
N. Koguchi ◽  
S. Takahashi ◽  
S. Akiba
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Quantum ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Photoluminescence Studies of a Quantum Well Modulated by Faceting on Gaas (110) Surfaces

1993 ◽  
Vol 312 ◽  
Author(s):  
S. Tomiya ◽  
C. M. Reaves ◽  
M. Krishnamurthy ◽  
M. Wassermeier ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Vicinal Surface ◽  
Temperature Dependent ◽  
Molecular Beam Epitaxial ◽  
Photoluminescence Studies ◽  
Molecular Beam Epitaxial Growth

AbstractStep bunching during epitaxial growth results in the transformation of a vicinal surface into a periodic array of micro-facets. Molecular beam epitaxial growth on the vicinal GaAs (110) surface exhibits this phenomenon which has primarily been characterized by electron microscopy. GaAs quantum wells with AlAs barriers were grown on GaAs(110) substrates vicinal 0.5-2· towards [010]. The faceting on the vicinal surface creates two distinct quantum well thicknesses. While most of the quantum well is 96Å thick, it broadens at the faceted regions. This thickness modulation produces two distinct luminescence peaks. By using temperature dependent photoluminescence, we have observed trends in exciton mobility. The exciton mobility decreases at low temperatures for the 1.0° and 2.0° samples, indicating a scattering mechanism. We will discuss interface roughness and other sources of scattering.

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth
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