High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1248-1250 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Akbar Nouhi ◽  
Gouri Radhakrishnan ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Peak Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Peak ◽  
High Peak Power ◽  
Si Substrates ◽  
Low Threshold ◽  
Stripe Laser

Narrow‐beam five‐layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak power

1976 ◽  
Vol 47 (4) ◽  
pp. 1501-1514 ◽  
Author(s):  
G. H. B. Thompson ◽  
G. D. Henshall ◽  
J. E. A. Whiteaway ◽  
P. A. Kirkby
Keyword(s):  
Peak Power ◽  
High Peak ◽  
High Peak Power ◽  
Narrow Beam ◽  
Low Threshold

1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 5-8 ◽  
Author(s):  
D. Bonnevie ◽  
F. Poingt ◽  
L. Le Gouézigou ◽  
A. Guichardon ◽  
A. Accard ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Gas Source ◽  
Stripe Laser

High-Power AlGaAs/GaAs DH Stripe Laser Diodes on GaAs-on-Si Prepared by Migration-Enhanced Molecular Beam Epitaxy

1989 ◽  
Vol 28 (Part 1, No. 5) ◽  
pp. 791-796 ◽  
Author(s):  
Jae-Hoon Kim ◽  
Gouri Radhakrishnan ◽  
Akbar Nouhi ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Gaas On Si ◽  
Stripe Laser
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