Determining band alignment using a single core-level photoelectron spectrum

Scilight ◽  
2021 ◽  
Vol 2021 (27) ◽  
pp. 271103
Author(s):  
Jodi Ackerman Frank
1989 ◽  
Vol 44 (9) ◽  
pp. 780-784
Author(s):  
F. Burgäzy ◽  
C. Politis ◽  
P. Lamparter ◽  
S. Steeb

Abstract The measured O Kα X-ray emission spectrum of the high-Tc superconductor Bi2Sr2CaCu2O8-x is compared with a spectrum based on local density band structure calculations. By taking also into account the shape of the measured O 1s X-ray photoelectron spectrum an energy level diagram for the O 1s core-level binding energies of the three different oxygen sites is constructed. The O 1s binding energy in the Bi2O2-layers is found to be about the same as that one in the SrO-layers, whereas the binding energy in the CuO2-layers is lower by about 0.5 eV.


2009 ◽  
Vol 42 (5) ◽  
pp. 055201 ◽  
Author(s):  
M Abu-samha ◽  
K J Børve ◽  
M Winkler ◽  
J Harnes ◽  
L J Sæthre ◽  
...  

1995 ◽  
Vol 386 ◽  
Author(s):  
J. L. Alay ◽  
M. Fukuda ◽  
C. H. Bjorkman ◽  
K. Nakagawa ◽  
S. Sasaki ◽  
...  

ABSTRACTUltra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.


2017 ◽  
Vol 110 (8) ◽  
pp. 082104 ◽  
Author(s):  
Scott A. Chambers ◽  
Yingge Du ◽  
Ryan B. Comes ◽  
Steven R. Spurgeon ◽  
Peter V. Sushko
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document