Effect of silicon thickness on the performance of conventional junctionless field effect transistor

2020 ◽  
Author(s):  
Mohit Agarwal ◽  
Vishal Narula
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Silicon Thickness

scholarly journals FIN Junctionless Field Effect Transistor (FIN-JLFET) With Ground Plane For Surpassing Parasitic BJT Action

2021 ◽  
Author(s):  
Bhaskar Kumar ◽  
Bharat Gupta ◽  
Sangeeta Singh ◽  
Pankaj Kumar
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ground Plane ◽  
Gate Length ◽  
Volume Depletion ◽  
Leakage Mechanism ◽  
Junctionless Transistor ◽  
Band To Band Tunneling ◽  
Effect Transistor ◽  
Silicon Thickness

Abstract The leakage mechanism due to lateral band-to-band tunneling (L-BTBT) results in increased off state current and hinders the scaling of the junctionless transistor. The effect of L-BTBT on FIN shaped gate Junctionless field effect transistor (JLFET) with the ground plane (GP) in oxide has been investigated. The proposed device is simulated using 3-D Silvaco TCAD and shows that it can mitigate the L-BTBT and leads to efficient volume depletion which relaxes the requirements of ultra-thin silicon thickness and high workfunction of the gate electrode. The results show significantly reduced OFF-state current and high Ion /Ioff ratio even at scaled gate length beyond 10 nm along with the reduction in drain induced barrier lowering and threshold voltage roll-off . Thus, the proposed device shows better performance at sub-10 nm node.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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