scholarly journals Origin of performance improvement in solution-processed indium–gallium–zinc-oxide thin-film transistors having thin active layer and asymmetric dual gate structure

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125110
Author(s):  
Jeongmin Kim ◽  
Jaewook Jeong
RSC Advances ◽  
2016 ◽  
Vol 6 (47) ◽  
pp. 41439-41446 ◽  
Author(s):  
Meilan Xie ◽  
Shaojing Wu ◽  
Zheng Chen ◽  
Qasim Khan ◽  
Xinzhou Wu ◽  
...  

Performance of printed indium gallium zinc oxide thin-film transistors was significantly enhanced with the increase of hotplate preheating temperature.


2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  

2021 ◽  
Vol 42 (3) ◽  
pp. 031101
Author(s):  
Ying Zhu ◽  
Yongli He ◽  
Shanshan Jiang ◽  
Li Zhu ◽  
Chunsheng Chen ◽  
...  

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  

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