Ion mobility independent large signal switching of perovskite devices

Applied Physics Letters ◽

10.1063/5.0051342 ◽

2021 ◽

Vol 119 (2) ◽

pp. 023506

Author(s):

Tirupati Saketh Chandra ◽

Abhimanyu Singareddy ◽

Kashimul Hossain ◽

Dhyana Sivadas ◽

Swasti Bhatia ◽

...

Keyword(s):

Ion Mobility ◽

Large Signal ◽

Signal Switching

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Large-Signal Switching of Bipolar Transistors and MOSFETs

Intuitive Analog Circuit Design ◽

10.1016/b978-0-12-405866-8.00010-3 ◽

2014 ◽

pp. 341-398 ◽

Author(s):

Marc T. Thompson

Keyword(s):

Bipolar Transistors ◽

Large Signal ◽

Signal Switching

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Modeling distributed dynamic lateral large-signal switching effects in bipolar transistors

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709136 ◽

2019 ◽

Author(s):

M. Schroter ◽

M. Krattenmacher

Keyword(s):

Bipolar Transistors ◽

Large Signal ◽

Signal Switching

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Large-signal switching transients in index-guided semiconductor lasers

Electronics Letters ◽

10.1049/el:19840545 ◽

1984 ◽

Vol 20 (19) ◽

pp. 802 ◽

Author(s):

R.S. Tucker

Keyword(s):

Semiconductor Lasers ◽

Large Signal ◽

Signal Switching

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IIB-8 Large signal switching response of submicron Si and GaAs MESFET's: Device vs circuit

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1981.20533 ◽

1981 ◽

Vol 28 (10) ◽

pp. 1220-1220 ◽

Author(s):

J. Faricelli ◽

J. Nulman ◽

P. Krusius ◽

J. Frey

Keyword(s):

Large Signal ◽

Signal Switching

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Lateral charge partitioning across the internal base resistance for modelling distributed dynamic lateral effect in SiGe HBTs during large signal switching

2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) ◽

10.1109/eurosime48426.2020.9152736 ◽

2020 ◽

Author(s):

R. Salvato ◽

M. Krattenmacher ◽

C. Rubino ◽

V. d'Alessandro ◽

M. Schroter

Keyword(s):

Large Signal ◽

Base Resistance ◽

Signal Switching ◽

Charge Partitioning

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A large-signal switching MESFET model for intermodulation distortion analysis

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.826843 ◽

2000 ◽

Vol 48 (3) ◽

pp. 431-436 ◽

Author(s):

K. Fujii ◽

Y. Hara ◽

T. Yakabe ◽

H. Yabe

Keyword(s):

Intermodulation Distortion ◽

Large Signal ◽

Distortion Analysis ◽

Signal Switching

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Picosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor

Applied Physics Letters ◽

10.1063/1.107642 ◽

1992 ◽

Vol 61 (10) ◽

pp. 1187-1189 ◽

Author(s):

M. K. Jackson ◽

M. Y. Frankel ◽

J. F. Whitaker ◽

G. A. Mourou ◽

D. Hulin ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Large Signal ◽

Signal Switching ◽

Effect Transistor ◽

Switching Characteristics

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A General Junction-Transistor Equivalent Circuit for Use in Large-Signal Switching Analysis

IRE Transactions on Electronic Computers ◽

10.1109/tec.1961.5219272 ◽

1961 ◽

Vol EC-10 (4) ◽

pp. 670-679 ◽

Author(s):

S. B. Geller ◽

P. A. Mantek ◽

D. R. Boyle

Keyword(s):

Equivalent Circuit ◽

Large Signal ◽

Junction Transistor ◽

Signal Switching

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Erratum: ‘‘Picosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulation‐doped field‐effect transistor’’ [Appl. Phys. Lett. 61, 1187 (1992)]

Applied Physics Letters ◽

10.1063/1.108504 ◽

1992 ◽

Vol 61 (26) ◽

pp. 3194-3194

Author(s):

M. K. Jackson ◽

M. Y. Frankel ◽

J. F. Whitaker ◽

G. A. Mourou ◽

D. Hulin ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Large Signal ◽

Signal Switching ◽

Effect Transistor ◽

Switching Characteristics

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Picosecond Pseudomorphic AIGaAs/InGaAs MODFET Large-Signal Switching Measured by Electro-Optic Sampling

Ultrafast Phenomena VIII - Springer Series in Chemical Physics ◽

10.1007/978-3-642-84910-7_160 ◽

1993 ◽

pp. 500-502

Author(s):

M. K. Jackson ◽

M. Y. Frankel ◽

J. F. Whitaker ◽

G. A. Mourou ◽

D. Hulin ◽

...

Keyword(s):

Large Signal ◽

Electro Optic ◽

Signal Switching

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