Lateral charge partitioning across the internal base resistance for modelling distributed dynamic lateral effect in SiGe HBTs during large signal switching

2020 ◽  
Author(s):  
R. Salvato ◽  
M. Krattenmacher ◽  
C. Rubino ◽  
V. d'Alessandro ◽  
M. Schroter
Keyword(s):  
Large Signal ◽  
Base Resistance ◽  
Signal Switching ◽  
Charge Partitioning

IIB-8 Large signal switching response of submicron Si and GaAs MESFET's: Device vs circuit

1981 ◽  
Vol 28 (10) ◽  
pp. 1220-1220 ◽  
Author(s):  
J. Faricelli ◽  
J. Nulman ◽  
P. Krusius ◽  
J. Frey
Keyword(s):  
Large Signal ◽  
Signal Switching

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Vol 119 (2) ◽  
pp. 023506
Author(s):  
Tirupati Saketh Chandra ◽  
Abhimanyu Singareddy ◽  
Kashimul Hossain ◽  
Dhyana Sivadas ◽  
Swasti Bhatia ◽  
...  
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Ion Mobility ◽  
Large Signal ◽  
Signal Switching

scholarly journals Picosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor

1992 ◽  
Vol 61 (10) ◽  
pp. 1187-1189 ◽  
Author(s):  
M. K. Jackson ◽  
M. Y. Frankel ◽  
J. F. Whitaker ◽  
G. A. Mourou ◽  
D. Hulin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Large Signal ◽  
Signal Switching ◽  
Effect Transistor ◽  
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Picosecond Pseudomorphic AIGaAs/InGaAs MODFET Large-Signal Switching Measured by Electro-Optic Sampling

1993 ◽  
pp. 500-502
Author(s):  
M. K. Jackson ◽  
M. Y. Frankel ◽  
J. F. Whitaker ◽  
G. A. Mourou ◽  
D. Hulin ◽  
...  
Keyword(s):  
Large Signal ◽  
Electro Optic ◽  
Signal Switching
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