Anisotropic artificial synapse based on 2D ReS2 field-effect transistor

Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.

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Artificial Synapse Based on Back‐Gated MoS 2 Field‐Effect Transistor with High‐ k Ta 2 O 5 Dielectrics

physica status solidi (a) ◽

10.1002/pssa.202000254 ◽

2020 ◽

Vol 217 (19) ◽

pp. 2000254

Author(s):

Neha Mohta ◽

Roop K. Mech ◽

Sooraj Sanjay ◽

R. Muralidharan ◽

Digbijoy N. Nath

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Artificial Synapse ◽

High K ◽

Effect Transistor

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Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

Advanced Functional Materials ◽

10.1002/adfm.201904602 ◽

2019 ◽

Vol 29 (50) ◽

pp. 1904602 ◽

Cited By ~ 29

Author(s):

Yang Yu ◽

Qihao Ma ◽

Haifeng Ling ◽

Wen Li ◽

Ruolin Ju ◽

...

Keyword(s):

Small Molecule ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistor ◽

Organic Field Effect Transistor ◽

Artificial Synapse ◽

Effect Transistor

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Implementing an artificial synapse and neuron using a Si nanowire ion-sensitive field-effect transistor and indium-gallium-zinc-oxide memristors

Sensors and Actuators B Chemical ◽

10.1016/j.snb.2019.05.093 ◽

2019 ◽

Vol 296 ◽

pp. 126616 ◽

Cited By ~ 4

Author(s):

Sungju Choi ◽

Seohyeon Kim ◽

Jungkyu Jang ◽

Gumho Ahn ◽

Jun Tae Jang ◽

...

Keyword(s):

Zinc Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Indium Gallium Zinc Oxide ◽

Si Nanowire ◽

Artificial Synapse ◽

Effect Transistor ◽

Indium Gallium

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AP2.2 - Artificial Synapse and Neuron Combining the Ion-Sensitive Field-Effect Transistor and Memristor

10.5162/imcs2018/ap2.2 ◽

2018 ◽

Author(s):

S. Choi ◽

S. Kim ◽

J. Jang ◽

G. Ahn ◽

J. T. Jang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Artificial Synapse ◽

Effect Transistor

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Artificial Synapse Based on Back‐Gated MoS 2 Field‐Effect Transistor with High‐ k Ta 2 O 5 Dielectrics

physica status solidi (a) ◽

10.1002/pssa.202070056 ◽

2020 ◽

Vol 217 (19) ◽

pp. 2070056

Author(s):

Neha Mohta ◽

Roop K. Mech ◽

Sooraj Sanjay ◽

R. Muralidharan ◽

Digbijoy N. Nath

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Artificial Synapse ◽

High K ◽

Effect Transistor

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Oxide Field-Effect Transistor with Polymer-Based Gate Insulator

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.207 ◽

2019 ◽

Vol 139 (3) ◽

pp. 207-210

Author(s):

Kohei Fujiwara

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Effect Transistor

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Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

IEICE Transactions on Electronics ◽

10.1587/transele.e93.c.540 ◽

2010 ◽

Vol E93-C (5) ◽

pp. 540-545 ◽

Cited By ~ 10

Author(s):

Dong Seup LEE ◽

Hong-Seon YANG ◽

Kwon-Chil KANG ◽

Joung-Eob LEE ◽

Jung Han LEE ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

IEICE Transactions on Electronics ◽

10.1587/transele.e97.c.677 ◽

2014 ◽

Vol E97.C (7) ◽

pp. 677-682

Author(s):

Sung YUN WOO ◽

Young JUN YOON ◽

Jae HWA SEO ◽

Gwan MIN YOO ◽

Seongjae CHO ◽

...

Keyword(s):

Silicon Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

Proceedings of Universities ELECTRONICS ◽

10.24151/1561-5405-2019-24-4-407-414 ◽

2019 ◽

Vol 24 (4) ◽

pp. 407-414

Author(s):

Oksana V. Gubanova ◽

◽

Evgeniy V. Kuznetsov ◽

Elena N. Rybachek ◽

Alexander N. Saurov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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