Implementing an artificial synapse and neuron using a Si nanowire ion-sensitive field-effect transistor and indium-gallium-zinc-oxide memristors
2019 ◽
Vol 296
◽
pp. 126616
◽
Keyword(s):
2020 ◽
Vol 312
◽
pp. 127955
◽
Keyword(s):
Keyword(s):
2016 ◽
Vol 55
(4S)
◽
pp. 04EG09
◽
Keyword(s):
2016 ◽
Vol 15
(2)
◽
pp. 289-294
◽
Keyword(s):