scholarly journals Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

2021 ◽  
Vol 130 (6) ◽  
pp. 065703
Author(s):  
Hiroki Nakane ◽  
Masashi Kato ◽  
Yutaro Ohkouchi ◽  
Xuan Thang Trinh ◽  
Ivan G. Ivanov ◽  
...  
Keyword(s):  
Deep Levels ◽  
Vacancy Pair

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Deep Levels in Ion Implanted GaAs (Gallium Arsenide)

1986 ◽  
Author(s):  
Harry B. Dietrich ◽  
R. Magno
Keyword(s):  
Gallium Arsenide ◽  
Deep Levels ◽  
Ion Implanted

Measurement of Deep Levels at InGaAs(P)/InP Heterojunctions

1990 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Deep Levels

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

Self-compensation and deep levels in Pb1−xSnxS1−ySey crystals

1992 ◽  
Vol 14 (4) ◽  
pp. 398-400 ◽  
Author(s):  
D.M. Zayachuk ◽  
V.I. Garasim ◽  
V.A. Shenderovskii
Keyword(s):  
Deep Levels

Deep levels in semiconductors

1980 ◽  
Vol 29 (3) ◽  
pp. 409-525 ◽  
Author(s):  
M. Jaros
Keyword(s):  
Deep Levels

scholarly journals THE PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS

1968 ◽  
Vol 13 (9) ◽  
pp. 295-297 ◽  
Author(s):  
R. G. Hunsperger ◽  
O. J. Marsh ◽  
C. A. Mead
Keyword(s):  
Deep Levels ◽  
Ion Implanted
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