New temperature fluctuation method for direct determination of thermal activation energy of deep levels in semiconductors

1983 ◽  
Vol 19 (7) ◽  
pp. 271 ◽  
Author(s):  
V. Kumar ◽  
H. Indusekhar
Keyword(s):  
Activation Energy ◽  
Temperature Fluctuation ◽  
Thermal Activation ◽  
Direct Determination ◽  
Thermal Activation Energy ◽  
Deep Levels ◽  
Fluctuation Method

Determination of the thermal activation energy and grain size of iron phthalocyanine thin films

2001 ◽  
Vol 48 (2) ◽  
pp. 64-73 ◽  
Author(s):  
K.P. Khrishnakumar ◽  
C.S. Menon
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Size ◽  
Thermal Activation ◽  
Thermal Activation Energy ◽  
Iron Phthalocyanine

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 401-404
Author(s):  
Nguyen Tien Son ◽  
Patrick Carlsson ◽  
Andreas Gällström ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Activation Energy ◽  
Electron Paramagnetic Resonance ◽  
Thermal Activation ◽  
Activation Energies ◽  
Thermal Activation Energy ◽  
Deep Levels ◽  
Paramagnetic Resonance ◽  
Intrinsic Defects ◽  
Carbon Vacancy ◽  
Electron Paramagnetic

Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic resonance. We show that only in heavily V-doped 4H-SiC vanadium is responsible for the SI behavior, whereas in moderate V-doped substrates with the V concentration comparable or slightly higher than that of the shallow N donor or B acceptor, the SI properties are thermally unstable and determined by intrinsic defects. The results show that the commonly observed thermal activation energy Ea~1.1 eV in V-doped 4H-SiC, which was previously assigned to the single acceptor V4+/3+ level, may be related to deep levels of the carbon vacancy. Carrier compensation processes involving deep levels of V and intrinsic defects are discussed and possible thermal activation energies are suggested.

Thermal Activation Energy and Semiconducting Properties of Macromolecular Substances

2007 ◽  
Vol 22 (2) ◽  
pp. 867-879 ◽  
Author(s):  
Aleksander Szymański ◽  
Marian Kryszewski
Keyword(s):  
Activation Energy ◽  
Thermal Activation ◽  
Thermal Activation Energy ◽  
Semiconducting Properties

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

Thermal activation energy for bidirectional movement of actin along bipolar tracks of myosin filaments

2010 ◽  
Vol 396 (2) ◽  
pp. 539-542 ◽  
Author(s):  
Hiroyuki Okubo ◽  
Masanori Iwai ◽  
Sosuke Iwai ◽  
Shigeru Chaen
Keyword(s):  
Activation Energy ◽  
Thermal Activation ◽  
Thermal Activation Energy ◽  
Myosin Filaments ◽  
Bidirectional Movement
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