Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

2021 ◽  
Vol 130 (20) ◽  
pp. 205704
Author(s):  
Xiaorui Wang ◽  
Tao Wang ◽  
Dapeng Yu ◽  
Shijie Xu
Keyword(s):  
Quantum Wells ◽  
Thermal Quenching ◽  
Yellow Luminescence

Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells

1990 ◽  
Vol 57 (19) ◽  
pp. 1986-1988 ◽  
Author(s):  
J. D. Lambkin ◽  
D. J. Dunstan ◽  
K. P. Homewood ◽  
L. K. Howard ◽  
M. T. Emeny
Keyword(s):  
Quantum Wells ◽  
Thermal Quenching ◽  
Strained Layer

Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy

2011 ◽  
Vol 9 (2) ◽  
pp. 255-258 ◽  
Author(s):  
J. Kasai ◽  
R. Akimoto ◽  
T. Hasama ◽  
H. Ishikawa ◽  
S. Fujisaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Yellow Luminescence ◽  
Highly Strained

scholarly journals Selective excitation and thermal quenching of the yellow luminescence of GaN

1999 ◽  
Vol 75 (21) ◽  
pp. 3273-3275 ◽  
Author(s):  
J. S. Colton ◽  
P. Y. Yu ◽  
K. L. Teo ◽  
E. R. Weber ◽  
P. Perlin ◽  
...  
Keyword(s):  
Thermal Quenching ◽  
Selective Excitation ◽  
Yellow Luminescence

Excitonic Properties of ZnSe-ZnS Strained-Layer Superlattices and A Fibonacci Sequence

1989 ◽  
Vol 161 ◽  
Author(s):  
Tsunemasa Taguchi ◽  
Yoichi Yamada
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Thermal Dissociation ◽  
Thermal Quenching ◽  
Fibonacci Sequence ◽  
Type I ◽  
Strained Layer ◽  
Superlattice Structure ◽  
Hole Band ◽  
Excitonic Properties

ABSTRACTExcitonic properties of ZnSe-ZnS strained-layer quantum wells (SLQWs) with type I band lineups are reviewed on the basis of our recent results of temperature- and strain-dependent photoluminescence and absorption spectra. In order to estimate the conduction and valence band offsets as a function of ZnSe well thickness, we have modified the “model-solid” theory in which the valence bands (heavy-hole band in ZnSe and light-hole band in ZnS) are relatively moved with strains. Temperature and high excitation dependent studies of the n=1 heavy-hole excitons suggest a localization of excitons and reveals the important evidence on scatterings of excitons with acoustic and optical phonons. The thermal quenching of the exciton emission is caused by thermal dissociation of quasi-two-dimensional excitons through electrons and holes, from which the activation energy for this dissociation is 4 times larger than Ea.3D (a binding energy of bulk exciton) of ZnSe. A new superlattice structure with a quasiperiodic crystal which is derived from a finite Fibonacci sequence, has been fabricated by a low-pressure MOCVD method and its photoluminescence properties are for the first time introduced.

Band Offsets and Photoluminescence Thermal Quenching in Mid-Infrared Emitting GaInAsSb Quantum Wells with Quinary AlGaInAsSb Barriers

2010 ◽  
Vol 49 (3) ◽  
pp. 031202 ◽  
Author(s):  
Grzegorz Sęk ◽  
Marcin Motyka ◽  
Krzysztof Ryczko ◽  
Filip Janiak ◽  
Jan Misiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Quenching ◽  
Mid Infrared ◽  
Band Offsets

Thermal quenching of the yellow luminescence in GaN

2018 ◽  
Vol 123 (16) ◽  
pp. 161520 ◽  
Author(s):  
M. A. Reshchikov ◽  
N. M. Albarakati ◽  
M. Monavarian ◽  
V. Avrutin ◽  
H. Morkoç
Keyword(s):  
Thermal Quenching ◽  
Yellow Luminescence

Thermal Quenching of the Photoluminescence of InGaAs/GaAs Single Quantum Wells Adjacent to a Selectively Oxidized AlAs Layer

1998 ◽  
Vol 37 (Part 2, No. 3A) ◽  
pp. L275-L277 ◽  
Author(s):  
Andrew Richard Pratt ◽  
Takeshi Takamori ◽  
Takeshi Kamijoh
Keyword(s):  
Quantum Wells ◽  
Thermal Quenching ◽  
Single Quantum ◽  
Alas Layer
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