Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells

ABSTRACTExcitonic properties of ZnSe-ZnS strained-layer quantum wells (SLQWs) with type I band lineups are reviewed on the basis of our recent results of temperature- and strain-dependent photoluminescence and absorption spectra. In order to estimate the conduction and valence band offsets as a function of ZnSe well thickness, we have modified the “model-solid” theory in which the valence bands (heavy-hole band in ZnSe and light-hole band in ZnS) are relatively moved with strains. Temperature and high excitation dependent studies of the n=1 heavy-hole excitons suggest a localization of excitons and reveals the important evidence on scatterings of excitons with acoustic and optical phonons. The thermal quenching of the exciton emission is caused by thermal dissociation of quasi-two-dimensional excitons through electrons and holes, from which the activation energy for this dissociation is 4 times larger than Ea.3D (a binding energy of bulk exciton) of ZnSe. A new superlattice structure with a quasiperiodic crystal which is derived from a finite Fibonacci sequence, has been fabricated by a low-pressure MOCVD method and its photoluminescence properties are for the first time introduced.

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Exchange and correlation effects in strained-layer semiconductor quantum wells

physica status solidi (b) ◽

10.1002/pssb.200301970 ◽

2004 ◽

Vol 241 (5) ◽

pp. 1046-1052

Author(s):

C. Tong ◽

M. R. Kim ◽

S. K. Kim ◽

B. H. Han ◽

J. K. Rhee

Keyword(s):

Quantum Wells ◽

Correlation Effects ◽

Strained Layer ◽

Semiconductor Quantum Wells ◽

Exchange And Correlation

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Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.3608 ◽

1992 ◽

Vol 31 (Part 1, No. 11) ◽

pp. 3608-3614 ◽

Cited By ~ 8

Author(s):

Yi-hong Wu ◽

Kunio Ichino ◽

Yoichi Kawakami ◽

Shizuo Fujita ◽

Shigeo Fujita

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Strained Layer

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1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156497000172 ◽

1997 ◽

Vol 08 (03) ◽

pp. 475-494 ◽

Cited By ~ 2

Author(s):

Toshihiko Makino

Keyword(s):

Quantum Wells ◽

High Speed ◽

Carrier Transport ◽

Stop Band ◽

Longitudinal Distribution ◽

Modulation Bandwidth ◽

Carrier Injection ◽

Strained Layer ◽

High Modulation ◽

Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

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Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.352005 ◽

1992 ◽

Vol 72 (11) ◽

pp. 5233-5239 ◽

Cited By ~ 50

Author(s):

Shizuo Fujita ◽

Yi‐hong Wu ◽

Yoichi Kawakami ◽

Shigeo Fujita

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Quantum ◽

Strained Layer ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

MRS Proceedings ◽

10.1557/proc-358-1011 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 1

Author(s):

Tiesheng Li ◽

H. J. Lozykowski

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Lattice Mismatch ◽

Electronic States ◽

Double Quantum ◽

Strain Effect ◽

Strained Layer ◽

Quantum Well Structure ◽

Double Quantum Well ◽

Theoretical Investigations

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

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