Effect of laser energies on the energy gap of cadmium oxide films prepared by pulsed laser deposition technique

2021 ◽  
Author(s):  
Kadhim A. Aadim ◽  
Mohammed G. Hammed ◽  
Khamees D. Mahmood
Keyword(s):  
Pulsed Laser Deposition ◽  
Energy Gap ◽  
Oxide Films ◽  
Cadmium Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique

scholarly journals Effect of Zinc (Zn) -Doped on the Structural, Optical and Electrical Properties of (Cdo)1-Xznx Films Prepared by Pulsed Laser Deposition Technique

2021 ◽  
Vol 19 (51) ◽  
pp. 64-71
Author(s):  
Haidar khudair Abbas ◽  
Kadhim A. Aadim ◽  
Ali H. Khidhir
Keyword(s):  
Pulsed Laser Deposition ◽  
Energy Gap ◽  
Cadmium Oxide ◽  
Pulsed Laser ◽  
Hexagonal Structure ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Atomic Force

Pure cadmium oxide films (CdO) and doped with zinc were prepared at different atomic ratios using a pulsed laser deposition technique using an ND-YAG laser from the targets of the pressed powder capsules. X-ray diffraction measurements showed a cubic-shaped of CdO structure. Another phase appeared, especially in high percentages of zinc, corresponding to the hexagonal structure of zinc. The degree of crystallinity, as well as the crystal size, increased with the increase of the zinc ratio for the used targets. The atomic force microscopy measurements showed that increasing the dopant percentage leads to an increase in the size of the nanoparticles, the particle size distribution was irregular and wide, in addition, to increase the surface roughness of the nanoparticles. An increase in the zinc ratio also led to a decrease in the energy gap. While the Hall effect measuring showed an increase in the concentration of charge carriers and a decrease in their mobility with increasing the doping ratio.

Transition metal oxide films prepared by pulsed laser deposition for atomic beam detection

1996 ◽  
Vol 281-282 ◽  
pp. 453-456 ◽  
Author(s):  
M. Tanaka ◽  
M. Mukai ◽  
Y. Fujimori ◽  
M. Kondoh ◽  
Y. Tasaka ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Atomic Beam ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Transition Metal Oxide ◽  
Laser Deposition ◽  
Metal Oxide Films

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

2010 ◽  
Vol 197 (1-3) ◽  
pp. 129-134 ◽  
Author(s):  
J. J. Dolo ◽  
H. C. Swart ◽  
E. Coetsee ◽  
J. J. Terblans ◽  
O. M. Ntwaeaborwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Luminescence Properties ◽  
Xps Analysis ◽  
Deposition Technique

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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