A thermally robust phosphor-in-glass film with high luminous efficiency for high-power blue laser diodes lighting

2021 ◽  
Vol 119 (22) ◽  
pp. 221904
Author(s):  
Jiangdan Zhang ◽  
Luhan Wang ◽  
Qiangqiang Zhu ◽  
Qing Chen ◽  
Xiaojuan Liang ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Luminous Efficiency ◽  
Blue Laser ◽  
Glass Film

High-power pure blue laser diodes

2007 ◽  
Vol 204 (6) ◽  
pp. 2068-2072 ◽  
Author(s):  
M. Ohta ◽  
Y. Ohizumi ◽  
Y. Hoshina ◽  
T. Tanaka ◽  
Y. Yabuki ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Blue Laser

Recent advances in high power blue laser diodes

2017 ◽  
Author(s):  
Muhammad Ali ◽  
Sven Gerhard ◽  
Bernhard Stojetz ◽  
Soenke Tautz ◽  
Georg Bruederl ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Blue Laser ◽  
Recent Advances

High-power visibly emitting Pr3+:YLF laser end pumped by single-emitter or fiber-coupled GaN blue laser diodes

2018 ◽  
Vol 57 (21) ◽  
pp. 5923 ◽  
Author(s):  
Hiroki Tanaka ◽  
Shogo Fujita ◽  
Fumihiko Kannari
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Blue Laser ◽  
Single Emitter

Collimation optics for high power blue laser diodes

2017 ◽  
Author(s):  
M. Huber ◽  
H. Forrer ◽  
P. Wuest ◽  
H. Moser ◽  
M. Forrer
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Blue Laser

Angular dependence of screen speckle and fiber speckle of coupled output of nine high-power blue laser diodes through a multi-mode fiber

2015 ◽  
Vol 23 (1) ◽  
pp. 121-132 ◽  
Author(s):  
Junichi Kinoshita ◽  
Hitoshi Aizawa ◽  
Akira Takamori ◽  
Kazuhisa Yamamoto ◽  
Hiroshi Murata ◽  
...  
Keyword(s):  
Angular Dependence ◽  
High Power ◽  
Laser Diodes ◽  
Blue Laser ◽  
Coupled Output ◽  
Multi Mode

67.4: GaN-Based High-Power Blue Laser Diodes for Display Applications

2006 ◽  
Vol 37 (1) ◽  
pp. 1915 ◽  
Author(s):  
Takashi Miyoshi ◽  
Tokuya Kozaki ◽  
Tomoya Yanamoto ◽  
Yasushi Fujimura ◽  
Shin-ichi Nagahama ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Blue Laser

ESD-Reliability Analysis and Strategy of the GaN-Based Light-Emitting Diodes

2015 ◽  
Vol 656-657 ◽  
pp. 57-62
Author(s):  
Shen Li Chen ◽  
Shawn Chang ◽  
Chun Hsing Shih ◽  
H.H. Chen
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Laser Diodes ◽  
Physical Property ◽  
Luminous Efficiency ◽  
Blue Laser ◽  
Light Emitting ◽  
Manufacture Process ◽  
Gan Led ◽  
Transient Events

Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. Although the gallium nitride has excellent physical properties, but in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in HBM, MM reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

52.3: High - Power InGaN Blue - Laser Diodes for Displays

2005 ◽  
Vol 36 (1) ◽  
pp. 1605 ◽  
Author(s):  
Tokuya Kozaki ◽  
Tomoya Yanamoto ◽  
Takashi Miyoshi ◽  
Yasushi Fujimura ◽  
Shin-ichi Nagahama ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Blue Laser
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