Power scaling of continuous-wave visible Pr3+:YLF laser end-pumped by high power blue laser diodes

Author(s):  
Hiroki Tanaka ◽  
Fumihiko Kannari
2012 ◽  
Author(s):  
Alexandre Laurain ◽  
Maik Scheller ◽  
Tsuei-Lian Wang ◽  
Jorg Hader ◽  
Jerome V. Moloney ◽  
...  

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.


2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
Author(s):  
Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  

2007 ◽  
Vol 204 (6) ◽  
pp. 2068-2072 ◽  
Author(s):  
M. Ohta ◽  
Y. Ohizumi ◽  
Y. Hoshina ◽  
T. Tanaka ◽  
Y. Yabuki ◽  
...  
Keyword(s):  

2008 ◽  
Vol 140 ◽  
pp. 17-26 ◽  
Author(s):  
Czeslaw Skierbiszewski

Recent progress in the growth of nitride based semiconductor structures made by plasma assisted MBE (PAMBE) is reported. The technology is ammonia free and the nitrogen for growth is activated by an RF plasma source from nitrogen molecules. A new approach for the growth of nitrides by PAMBE at temperature range 500 - 600°C is described. The key for this technique is to use a thin, dynamically stable metal (In or Ga) layer on the (0001) GaN surface, which enables a high quality 2D step-flow growth mode to be achieved at temperatures much lower than those determined by thermodynamic considerations. A new perspective for PAMBE in optoelectronics has been opened recently by a demonstration of continuous wave operation of InGaN blue–violet laser diodes. These laser diodes were fabricated on bulk GaN substrates with a low threading dislocation density.


Author(s):  
Muhammad Ali ◽  
Sven Gerhard ◽  
Bernhard Stojetz ◽  
Soenke Tautz ◽  
Georg Bruederl ◽  
...  

2017 ◽  
Vol 29 (24) ◽  
pp. 2203-2206 ◽  
Author(s):  
Jianping Liu ◽  
Liqun Zhang ◽  
Deyao Li ◽  
Kun Zhou ◽  
Yang Cheng ◽  
...  

2007 ◽  
Vol 88 (4) ◽  
pp. 527-530 ◽  
Author(s):  
Junhai Liu ◽  
Valentin Petrov ◽  
Huaijin Zhang ◽  
Jiyang Wang

1992 ◽  
Vol 281 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
Y. Lansari ◽  
K. J. Gossett ◽  
B. Sneed ◽  
...  

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.


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