Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

We have used a modified-intake plasma-enhanced metal–organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal–organic (MO) precursors and a radio-frequency (RF) system parallel to the substrate normal, which can achieve a uniform distribution of organic precursors in the reaction chamber and reduce the bombardment damage. We examined the substitute and interstitial mechanisms of Ga atoms in zinc oxide (ZnO) matrix in MIPEMOCVD-grown GZO thin films through crystalline analyses and Hall measurements. The optimal Ga content of MIPEMOCVD-grown GZO thin film is 3.01 at%, which shows the highest conductivity and transmittance. Finally, the optimal MIPEMOCVD-grown GZO thin film was applied to n-ZnO/p-GaN LED as a window layer. As compared with the indium–tin–oxide (ITO) window layer, the n-ZnO/p-GaN LED with the MIPEMOCVD-grown GZO window layer of the rougher surface and higher transmittance at near UV range exhibits an enhanced light output power owing to the improved light extraction efficiency (LEE).

Numerical modelling of non-planar GaN LED with CNT top contact

In this paper, the theoretical study of LED based on GaN NWs with carbon nanotubes (CNT) top contact has been presented. The main electrical and optical characteristics of LED have been numerically calculated. In a 0.5 x 0.5 mm NWs array, the Ohmic losses in CNTs were 2.7% with an operating current density of 50 A/cm2. It proves the possibility of using CNTs as transparent contact.

The model of degradation of an InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of the defects density in the heterostructure

A model of the optical power degradation of an InGaN/GaN LED during testing under direct current, which takes into account the inhomogeneous distribution of the defects density in the heterostructure, is presented. According to the simulation results, the rate of degradation of the LED optical power significantly depends on the degree of inhomogeneity of the defects density distribution profile. Experimental testing of the model has been carried out. The proposed model makes it possible to predict the rate of degradation of InGaN-based LEDs with varying degrees of inhomogeneity of the defects density distribution profile and can be used to develop a technique for rejecting defective and potentially unreliable LEDs.

N-face GaN substrate roughening for improved performance GaN-on-GaN LED

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.