Formation of polyaromatic hydrocarbon (PAH)-quinones during the gas phase reactions of PAHs with the OH radical in the atmosphere

2015 ◽  
Vol 12 (3) ◽  
pp. 307 ◽  
Author(s):  
Ji Yi Lee ◽  
Douglas A. Lane ◽  
Yong Pyo Kim

Environmental context Atmospheric quinones present a potential toxic risk to human health because of their involvement in the generation of reactive oxygen species. Gas phase reactions of naphthalene and phenanthrene with the OH radical are investigated in a laboratory reaction chamber to provide a preliminary assessment of the importance of the atmospheric formation of quinones. Abstract In light of the potential toxicity of quinones (QNs) to human health, previous studies carried out measurement of QNs in ambient air samples and from motor vehicle emissions to understand the characteristics and the sources of QNs in the atmosphere. The major compounds observed in the ambient air samples comprised two and three benzene rings and included polyaromatic hydrocarbon (PAH)-quinones (PAH-QNs) such as 1,2-naphthoquinone (1,2-NQ), 1,4-naphthoquinone (1,4-NQ), 9,10-phenanthrenequinone (9,10-PQ) and 9,10-anthraquinone (9,10-AQ). Although these PAH-QNs are found in vehicular emissions, they may also be formed by the photochemical reactions of gas phase PAHs with atmospheric oxidants. In this study, to allow an assessment of the importance of the atmospheric formation of PAH-QNs and to understand more clearly the sources of PAH-QNs in the atmosphere, the formation yields of PAH-QNs from the gas phase reactions of naphthalene and phenanthrene with the OH radical were observed in a laboratory reaction chamber. In addition, the phase distribution of the PAH-QNs was determined. For naphthoquinones (NQs), the formation yields of 1,4-NQ and 1,2-NQ were 1.5±0.4 and 5.1±2.7% respectively. The measured yields of PQs were 3.6±0.8% for 9,10-PQ and 2.7±1.1% for 1,4-PQ. From the measured yield data, the atmospheric formation of PAH-QNs was estimated and the importance of the atmospheric formation of PAH-QNs from the gas phase reaction of PAHs with the OH radical is discussed.


2012 ◽  
Vol 60 ◽  
pp. 460-466 ◽  
Author(s):  
Chenxi Zhang ◽  
Wenbo Yang ◽  
Jing Bai ◽  
Yuyang Zhao ◽  
Chen Gong ◽  
...  


1994 ◽  
Vol 148 (1) ◽  
pp. 11-21 ◽  
Author(s):  
Detlev Helmig ◽  
William P. Harger


ChemInform ◽  
2010 ◽  
Vol 23 (5) ◽  
pp. no-no
Author(s):  
E. C. TUAZON ◽  
W. P. L. CARTER ◽  
S. M. ASCHMANN ◽  
R. ATKINSON


Author(s):  
Azad Qazi Zade ◽  
Metin Renksizbulut ◽  
Jacob Friedman

Gas phase reaction effects in the catalytic oxidation of hydrogen on platinum-coated minichannels and microchannels are investigated numerically in planar geometry. The main objective of this work is to identify the relative importance of the gas phase and surface reactions under different operating conditions. A collocated finite-volume method is used to solve the governing equations. Detailed gas phase and surface reaction mechanisms along with a multi-component diffusion model are used. As the channel size is reduced, heat and radical losses to the walls can significantly alter the combustion behavior. While catalytic walls help in sustaining the gas phase reactions at very small length scales by reducing the heat losses to the walls owing to heat release associated with the surface reactions, they may inhibit homogeneous reactions by extracting radicals due to typically high absorption rates of such species at the walls. Thus, the radical chain mechanisms can be significantly altered by the presence of wall reactions, and the build-up of radical pools in the gas phase, which lead to homogeneous ignition, can be suppressed as a consequence. In the present study, the effects of two key parameters, i.e. channel height and the inlet mass flux on the interaction of gas phase and surface reactions will be explored. In each case, the limiting values beyond which the gas-phase reactions become relatively negligible compared to surface reactions will be identified for hydrogen/air mixtures.



2002 ◽  
Vol 36 (27) ◽  
pp. 4347-4355 ◽  
Author(s):  
Sara M. Aschmann ◽  
Janet Arey ◽  
Roger Atkinson


1991 ◽  
Vol 240 ◽  
Author(s):  
H. Liu ◽  
P. A. Zawadzki ◽  
P. E. Norris

ABSTRACTCurrent difficulties of Atomic Layer Epitaxy (ALE) include relatively low growth rates and narrow process windows. Gas phase reaction, complex behavior of valve switching and purging times are suggested as the major causes [1,2]. We have used a movable X-shaped mechanical barrier to divide the growth chamber into four zones. Each zone supplies either source gas or purging hydrogen. If the barrier is positioned 0.5–2 mm from the wafer carrier, it can efficiently shear off the boundary layer and therefore reduce gas phase reactions. The substrate, constantly rotating beneath the barrier, is alternately exposed to group III or V sources by purging zones. The result is that process times are significantly reduced, saturated growth rate of 1 μm/hour is obtained and a relatively wide process window is observed. It was found that the growth mode was not purely ALE, due to source gas mixing which contributes an additional, possible kinetically limited, component of growth rate. However, this was also found to result in uniform film.



1991 ◽  
Vol 23 (11) ◽  
pp. 1003-1015 ◽  
Author(s):  
Ernesto C. Tuazon ◽  
William P. L. Carter ◽  
Sara M. Aschmann ◽  
Roger Atkinson


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