Ferroelectric Domain Structure and Local Piezoelectric Properties of La-Modified PbTiO 3 Thin Films Prepared by Pulsed Laser Deposition

2002 ◽  
Vol 269 (1) ◽  
pp. 27-32 ◽  
Author(s):  
C. Polop ◽  
E. Vasco ◽  
M. Labardi ◽  
C. Zaldo ◽  
M. Allegrini ◽  
...  
2014 ◽  
Vol 631 ◽  
pp. 253-257 ◽  
Author(s):  
Tsutomu Nishigaki ◽  
Shigeki Hontsu

It has been well known that bone has piezoelectric properties and these properties have been considered to be caused by the shift of the center of symmetry of the positive and negative electrical charge due to the strain of the collagen fibers included in the bone. Thus, it has long been considered that there were no piezoelectric effects in the hexagonal hydroxyapatite (HAp) which has center of symmetry of crystal. However, in recent years, the piezoelectric property of artificially synthesized HAp was reported. In the authors’ previous report, a new result which showed the piezoelectricity of the hydroxyapatite (HAp) films fabricated by the pulsed laser deposition (PLD) method was reported. In this study, the effect of poling treatment on piezoelectric constant of pulsed laser deposited HAp films was investigated.


2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


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