Effect of structural modification on electro-mechanical behaviour of piezoelectric material under applied stress: an experimental study

2021 ◽  
Vol 585 (1) ◽  
pp. 151-162
Author(s):  
Prateek Asthana ◽  
Gargi Khanna
2016 ◽  
Vol 47 (8) ◽  
pp. 2184-2204 ◽  
Author(s):  
Duchamp Boris ◽  
Legrand Xavier ◽  
Soulat Damien

The tensile behaviour of braid reinforcement is classically described by the behaviour of composite elaborated from these reinforcements. Few studies concern the tensile behaviour of braided fabrics. In this paper biaxial and triaxial braids are manufactured on a braiding loom. The evolution of key parameters as linear mass and braiding angle in function of process parameters is presented. Braid reinforcements are characterized in uniaxial tensile. The mechanical behaviour is analysed and compared in function of the braiding angle, but also different kinds of braid are considered. A specific behaviour called “double-peak” is identified for triaxial braids which have a higher braiding angle. The evolution of the braiding angle measured during tensile tests gives a comprehension on the mechanical behaviour of dry braids. Associated with this experimental study, an analytical model is also proposed, to predict mechanical properties of braid reinforcements.


2020 ◽  
Vol 262 ◽  
pp. 119992 ◽  
Author(s):  
Zain Maqsood ◽  
Junichi Koseki ◽  
Md. Kamrul Ahsan ◽  
Masum Shaikh ◽  
Hiroyuki Kyokawa

2011 ◽  
Vol 35 (4) ◽  
pp. 414-420 ◽  
Author(s):  
M. A. Ferreira ◽  
R. Assumpcao ◽  
M. A. Luersen ◽  
P. C. Borges

2013 ◽  
Vol 854 ◽  
pp. 3-10
Author(s):  
O.V. Naumova ◽  
B. Fomin ◽  
V.P. Popov ◽  
Victor Strelchuk ◽  
A. Nikolenko ◽  
...  

Properties of Si/buried oxide (BOX) systems with bonded interface in silicon-on-insulator (SOI) wafers were studied in this paper. Results show impact of the starting Si material - Czochralski (Cz) or float-zone (Fz) grown silicon on the electron mobility (μe) and BOX charge behavior in ultrathin SOI layers. In particular, there were found: 1) the μe ~ Ne-0.3 dependencies at the electron density Ne in the range of 4х (1011-1012) cm-2 in accumulation Cz-SOI layers with the μe degradation when Si thickness decreases from 20 to 9 nm, and 2) the ~ Ne-0.6 behavior of mobility with no degradation in Fz-SOI layers. Raman spectroscopy shows the structural modification of Cz-SOI layers. An origin of degradation of the electrical and structural properties for ultrathin SOI layer is discussed.


Sign in / Sign up

Export Citation Format

Share Document