GaAs MESFET with lateral non-uniform doping

This paper presents an analytical expression for the depletion region height of short gate length GaAs MESFET with non-uniform doping profile in the channel region. Both, dark as well as illuminated conditions have been considered for model formulation. Depletion region height sensitivities on the doping parameters have also been demonstrated.

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Ambient temperature effects on DC behaviour of GaAs MESFET devices

IEE Proceedings G Circuits Devices and Systems ◽

10.1049/ip-g-2.1993.0050 ◽

1993 ◽

Vol 140 (4) ◽

pp. 305 ◽

Cited By ~ 9

Author(s):

J. Rodriguez-Tellez ◽

B. Stothard

Keyword(s):

Ambient Temperature ◽

Temperature Effects ◽

Gaas Mesfet

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Improvement of Carrier Power to Third-Order Intermodulation Distortion Power Ratio for a Power Amplifier at 5.25 GHz using LINC Method

The Open Electrical & Electronic Engineering Journal ◽

10.2174/1874129001812010034 ◽

2018 ◽

Vol 12 (1) ◽

pp. 34-40

Author(s):

Said Elkhaldi ◽

Naima Amar Touhami ◽

Mohamed Aghoutane ◽

Taj-eddin Elhamadi

Keyword(s):

Power Amplifier ◽

Artificial Neural Network Model ◽

Power Ratio ◽

Linear Amplification ◽

Third Order ◽

Gaas Mesfet ◽

Constant Envelope ◽

Modulation Signal ◽

Low Efficiency ◽

Nonlinear Components

Introduction:This paper focuses on improving the power amplifier linearity for wireless communications. The use of a single branch of a power amplifier can produce high distortion with low efficiency.Method:In this paper, the Linear Amplification with Nonlinear Components (LINC) technique is used to improve the linearity and efficiency of the power amplifier. The LINC technique is based on converting the envelope modulation signal into two constant envelope phase-modulated baseband signals. After amplification and combining the resulting signals, the required linear output signal is obtained. To validate the proposed approach, LINC technique is used for linearizing an amplifier based on a GaAs MESFET (described by an artificial neural network Model).Conclusion:Good results have been achieved, and an improvement of about 40.80 dBc and 47.50 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz.

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