The crystal structure of a new crystalline phase in the Al-Pd-Cr alloy system, studied by high-resolution electron microscopy

In this paper, high resolution electron microscopy (HREM) was used to observe nanosized Fe2M precipitates in M50NiL steel, and crystal structure of which was also investigated by selected area electron diffraction (SAED). At the same time, the orientation relationship between the Fe2M and the martensite matrix was also studied. The results suggested that crystal structure of Fe2M is close-packed hexagonal, and lattice parameters about a=b=0.473nm, c=0.772nm, α=β=90°, γ=120°. The orientation relationship between the nanoprecipitates Fe2M and martensite is and .

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Crystal Structure Determination of Superconductors and Related Compounds by Combining High-Resolution Electron Microscopy and Electron Diffraction

Microscopy and Microanalysis ◽

10.1017/s1431927602100729 ◽

2002 ◽

Vol 8 (S02) ◽

pp. 392-393

Author(s):

F.H. Li ◽

B.H. Wang ◽

H. Jiang

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

High Resolution ◽

Electron Diffraction ◽

Structure Determination ◽

High Resolution Electron Microscopy ◽

Crystal Structure Determination ◽

Resolution Electron ◽

Related Compounds

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Forbidden Reflection Intensity in Electron Diffraction and Crystal Structure Image in High Resolution Electron Microscopy

Transactions of the Japan Institute of Metals ◽

10.2320/matertrans1960.24.329 ◽

1983 ◽

Vol 24 (6) ◽

pp. 329-336 ◽

Cited By ~ 5

Author(s):

Sigemaro Nagakura ◽

Yoshio Nakamura

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

High Resolution ◽

Electron Diffraction ◽

High Resolution Electron Microscopy ◽

Resolution Electron ◽

Reflection Intensity

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Comparative Oxidation Studies of Polycrystalline HP and CVD Silicon Carbides by TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089007 ◽

1991 ◽

Vol 49 ◽

pp. 938-939

Author(s):

J.S. Bow ◽

M.J. Kim ◽

R.W. Carpenter

Keyword(s):

Electron Microscopy ◽

High Temperature ◽

Reaction Time ◽

High Resolution ◽

Oxide Layer ◽

Crystalline Phase ◽

High Resolution Electron Microscopy ◽

Substrate Type ◽

Resolution Electron ◽

Silicon Carbides

The excellent oxidation resistance of SiC at high temperature results from formation of a protective SiO2 layer in a strongly oxidizing environment. The oxide layer is often initially amorphous, may transform to a crystalline phase for extended reaction time, especially crystobalite above 1200°C. Our objective is use of high resolution electron microscopy methods to determine the oxide layer microstructure dependence on SiC substrate type, and especially to investigate existence of an intermediate Si-O-C phase between the oxide layer and substrate.

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The use of maximum entropy and likelihood ranking to determine the crystal structure of 4-(4′-(N,N-dimethyl)aminobenzylidene)-pyrazolidine-3,5-dione at 1.4 Å resolution from electron diffraction and high-resolution electron microscopy image data

Ultramicroscopy ◽

10.1016/0304-3991(94)90014-0 ◽

1994 ◽

Vol 56 (4) ◽

pp. 271-288 ◽

Cited By ~ 21

Author(s):

I.G. Voigt-Martin ◽

D.H. Yan ◽

C.J. Gilmore ◽

K. Shankland ◽

G. Bricogne

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

High Resolution ◽

Electron Diffraction ◽

Maximum Entropy ◽

Image Data ◽

High Resolution Electron Microscopy ◽

Electron Microscopy Image ◽

Resolution Electron ◽

Microscopy Image

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Image Deconvolution - An Effective Tool of Crystal Structure and Defect Determination in High-Resolution Electron Microscopy

MRS Proceedings ◽

10.1557/proc-1184-gg03-01 ◽

2009 ◽

Vol 1184 ◽

Author(s):

Fanghua Li ◽

Chunyan Tang

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

High Resolution ◽

High Resolution Electron Microscopy ◽

Image Deconvolution ◽

One Dimensional ◽

Modulated Structures ◽

Resolution Electron ◽

Different Types

AbstractImage deconvolution is introduced as an effective tool to enhance the determination of crystal structures and defects in high-resolution electron microscopy. The essence is to transform a single image that does not intuitively represent the examined crystal structure into the structure image. The principle and method of image deconvolution together with the related image contrast theory, the pseudo weak phase object approximation (pseudo WPOA), are briefly described. The method has been applied to different types of dislocations, twin boundaries, stacking faults, and one-dimensional incommensurate modulated structures. Results on the semiconducting epilayers Si0.76Ge0.24/Si and 3C-SiC/Si are given in some detail. The results on other compounds including AlSb/GaAs, GaN, Y0.6Na0.4Ba2Cu2.7Zn0.3O7-δ, Ca0.28Ba0.72Nb2O6 and Bi2.31Sr1.69CuO6+δ are briefly summarized. It is also shown how to recognize atoms of Si from C based on the pseudo WPOA, when the defect structures in SiC was determined at the atomic level with a 200 kV LaB6 microscope.

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