scholarly journals Fast-switching effect using viscous chiral-nematic materials

2016 ◽  
pp. 1-6 ◽  
Author(s):  
Valeri Lapanik ◽  
Sergei Timofeev ◽  
Genadz Sasnouski ◽  
Vladimir Bezborodov ◽  
Wolfgang Haase
2011 ◽  
Vol 99 (25) ◽  
pp. 253502 ◽  
Author(s):  
Stephen M. Morris ◽  
Damian J. Gardiner ◽  
Flynn Castles ◽  
Philip J. W. Hands ◽  
Timothy D. Wilkinson ◽  
...  

2011 ◽  
Vol 98 (26) ◽  
pp. 263508 ◽  
Author(s):  
Damian J. Gardiner ◽  
Stephen M. Morris ◽  
Flynn Castles ◽  
Malik M. Qasim ◽  
Wook-Sung Kim ◽  
...  

Soft Matter ◽  
2016 ◽  
Vol 12 (19) ◽  
pp. 4483-4488 ◽  
Author(s):  
Meina Yu ◽  
Xiaochen Zhou ◽  
Jinghua Jiang ◽  
Huai Yang ◽  
Deng-Ke Yang

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...


2020 ◽  
Vol 140 (6) ◽  
pp. 488-494
Author(s):  
Haruo Naitoh ◽  
Takaya Sugimoto ◽  
Keisuke Fujisaki
Keyword(s):  

Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.


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