Point Defect Production Under High Internal Stress Without Dislocations in Ni and Cu

2002 ◽  
Vol 157 (1-2) ◽  
pp. 171-178 ◽  
Author(s):  
K. Sato ◽  
T. Yoshiie ◽  
Y. Satoh ◽  
Q. Xu ◽  
E. Kuramoto ◽  
...  
Keyword(s):  
Point Defect ◽  
Internal Stress ◽  
Defect Production ◽  
High Internal Stress

Spectral dependence of point defect production by x rays in RbBr

1999 ◽  
Vol 60 (10) ◽  
pp. 7037-7042 ◽  
Author(s):  
F. C. Brown ◽  
S. M. Heald ◽  
DeTong Jiang ◽  
D. L. Brewe ◽  
K. H. Kim ◽  
...  
Keyword(s):  
Point Defect ◽  
Spectral Dependence ◽  
X Rays ◽  
Defect Production

On the point defect production in electron-irradiated molybdenum

1972 ◽  
Vol 14 (1) ◽  
pp. 135-140 ◽  
Author(s):  
R. Rizk ◽  
P. Vajda ◽  
F. Maury ◽  
A. Lucasson ◽  
P. Lucasson
Keyword(s):  
Point Defect ◽  
Defect Production

Application of Ultrasonic Stress Relief in the Fabrication of SU-8 Micro Structure

2011 ◽  
Vol 483 ◽  
pp. 3-8
Author(s):  
Li Qun Du ◽  
Qi Jia Wang ◽  
Xiao Lei Zhang
Keyword(s):  
Internal Stress ◽  
Stress Relief ◽  
Experimental Results ◽  
Micro Structure ◽  
Ultrasonic Stress Relief ◽  
Micro Structures ◽  
High Internal Stress

SU-8 photoresist has received a lot of attention in the MEMS field because of its excellent lithography properties. However, its high internal stress affects the overall pattern quality of the micro structures. The purpose of this work is to reduce the internal stress in SU-8 micro structure by ultrasonic stress relief technology. The stress relief mechanism of SU-8 micro structure was presented. The effect of ultrasonic stress relief on SU-8 micro structure was studied by experiments. The experimental results show that the internal stress in SU-8 micro structures can be reduced by ultrasonic stress relief technology.

Mechanisms of the electron irradiation-induced amorphous transition in intermetallic compounds

1986 ◽  
Vol 1 (3) ◽  
pp. 425-441 ◽  
Author(s):  
D.F. Pedraza
Keyword(s):  
Point Defect ◽  
Intermetallic Compounds ◽  
Point Defects ◽  
Tini Alloy ◽  
Sink Strength ◽  
Lattice Instability ◽  
Temperature Dependent ◽  
Defect Production ◽  
Theoretical Predictions ◽  
Radiation Induced

A buildup of radiation-induced lattice defects is proposed as the cause for lattice instability that can give rise to a crystalline-to-amorphous transition. An analysis of published experiments on intermetallic compounds suggests that, when amorphization takes place, no microstructural evolution based on the aggregation of like-point defects occurs. This observation leads us to suggest that buildup of a different type of defect, which will destabilize the crystal, should occur. We thus propose that an interstitial and a vacancy may form a complex, giving rise to a relaxed configuration exhibiting a sort of short-range order. Two mechanisms of complex formation are analyzed, one diffusionless (limited by the point defect production rate) and the other temperature dependent. The amorphization kinetics as a function of temperature, dose, and point defect sink strength are studied. Theoretical predictions on the amorphization dose as a function of temperature are made for the equiatomic TiNi alloy and compared with available experimental results.

Deformation Behavior And Internal Stress Of Icosahedral Al-Pd-Mn With Decagonal Phase Lamellae At Elevated Temperatures

1998 ◽  
Vol 553 ◽  
Author(s):  
H. Hirai ◽  
T. Tomita ◽  
F. Yoshida ◽  
H. Nakashima
Keyword(s):  
Stress Relaxation ◽  
Strain Rate ◽  
Internal Stress ◽  
Stress Exponent ◽  
Deformation Behavior ◽  
Elevated Temperatures ◽  
Initial Strain Rate ◽  
Decagonal Phase ◽  
Thermally Activated ◽  
High Internal Stress

AbstractFine decagonal phase lamellae-bearing icosahedral Al-Pd-Mn quasicrystals were tested compressionally at temperatures of 997 to 1073 K and initial strain rate of 3 × 10−5. to I × 10−4 S−1, and stress relaxation tests were performed at various stages of deformation. The results confirmed the thermally activated nature of deformation, and the stress exponent of strain rate was around 4. Internal stress for deformation estimated by Kikuchi's method reached 50 to 90 % of applied stress. The effective stress exponent of strain rate was revealed to be about 1.3. At least a part of high internal stress was attributable to complicated dislocation microstructure.

Ion track effect on point defect production in SiC

2011 ◽  
Vol 166 (7) ◽  
pp. 480-486 ◽  
Author(s):  
G. Litrico ◽  
M. Zimbone ◽  
P. Musumeci ◽  
L. Calcagno ◽  
G. Foti
Keyword(s):  
Point Defect ◽  
Defect Production
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