scholarly journals FERROELECTRIC FIELD-EFFECT TRANSISTOR DIFFERENTIAL AMPLIFIER CIRCUIT ANALYSIS

2009 ◽  
Vol 105 (1) ◽  
pp. 107-117
Author(s):  
THOMAS A. PHILLIPS ◽  
TODD C. MACLEOD ◽  
FAT D. HO
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Analysis ◽  
Differential Amplifier ◽  
Amplifier Circuit ◽  
Effect Transistor

A 450°C High Voltage Gain AC Coupled Differential Amplifier

2012 ◽  
Vol 717-720 ◽  
pp. 1253-1256
Author(s):  
Jie Yang ◽  
John Fraley ◽  
Bryon Western ◽  
Marcelo Schupbach ◽  
Alexander B. Lostetter
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Gain ◽  
Differential Amplifier ◽  
Harsh Environment ◽  
Signal Quality ◽  
Voltage Gain ◽  
High Voltage Gain ◽  
Effect Transistor ◽  
High Temperature Operation

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with harsh environment sensors that deliver weak AC output signals to improve signal quality and noise immunity.

Fabrication of SiC JFET-Based Monolithic Integrated Circuits

2010 ◽  
Vol 645-648 ◽  
pp. 1115-1118 ◽  
Author(s):  
Xiao An Fu ◽  
Amita Patil ◽  
Te Hao Lee ◽  
Steven Garverick ◽  
Mehran Mehregany
Keyword(s):  
Integrated Circuits ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Analog Integrated Circuits ◽  
Single Stage ◽  
Differential Amplifier ◽  
Interlayer Dielectric ◽  
Monolithic Integrated Circuits ◽  
Effect Transistor

We report fabrication of lateral, n-channel, depletion-mode, junction-field-effect-transistor (JFET) monolithic analog integrated circuits (ICs) in 6H-SiC. Ti/TaSi2/Pt forms the contact metalization, Ti/Pt the interconnect metal, and the SiO2/Si3N4/SiO2 interlayer dielectric. The threshold voltage and pinch off current indicate that the actual channel doping and thickness is close to the nominal values specified. The wafer yield for good circuits of a single-stage differential amplifier is 54% out of 46 copies.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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