Ba0.60Sr0.40TiO3 THIN FILMS FOR MICROWAVE PHASE SHIFTER DEVICES: THE INFLUENCE OF CRYSTALLIZATION TEMPERATURE ON THE ELECTRIC FIELD DEPENDENT PHASE SHIFT RESPONSE

2010 ◽  
Vol 111 (1) ◽  
pp. 68-79 ◽  
Author(s):  
M. W. COLE ◽  
R. C. TOONEN ◽  
S. G. HIRSCH ◽  
E. NGO ◽  
R. R. ROMANOFSKY ◽  
...  
2004 ◽  
Vol 833 ◽  
Author(s):  
Minoru Noda ◽  
Daniel Popovici ◽  
Masanori Okuyama ◽  
Yoshinobu Sasaki ◽  
Makio Komaru

ABSTRACTBarium Strontium Titanate (BST) thin films have been deposited on (100)-oriented MgO substrate by combining preparation of initial layer by Pulsed Laser Deposition and main layer by Metal-Organic-Decomposition method. Films with an initial layer of 20, 30 and 40 nm thickness and final thickness of 400, 650 and 800 nm have been obtained. Physical and dielectric properties of the BST thin films have been characterized from the viewpoint of frequency-agile micro and millimeter wave circuit applications. The results reveal that Ba0.6Sr0.4TiO3 thin films have a good crystallinity with characteristic orientation that is affected by the deposition conditions of the initial layer. Interdigital capacitor with a gap of 10 μm has been characterized and the dielectric loss and tunability are as low as 0.002 to 0.004 and 12%, respectively, at frequency of 1 MHz for the applied voltage from -/+40V to +/-40V. At microwave frequencies, classical coplanar waveguide lines formed on BST/(100)MgO were investigated. A differential phase shift of 18 degree was obtained at 20 GHz with insertion loss of about −2 dB at 60 V for Au/Cr interconnection. Finally, a 3-stage LC-ladder-type phase shifter with variable capacitors of BST thin film has been fabricated considering the experimental results obtained for the coplanar waveguide lines and a maximum phase shift of 40 degrees is obtained at 20 GHz at 60 V.


2002 ◽  
Vol 720 ◽  
Author(s):  
Dongsu Kim ◽  
Yoonsu Choi ◽  
Mark G. Allen ◽  
J. Stevenson Kenney ◽  
David W. Stollberg ◽  
...  

AbstractOne of the challenges faced in using ferroelectrics in high frequency devices is how to effectively use the material in a circuit design. A compact reflection-type phase shifter fabricated on sapphire substrates coated with ferroelectric barium strontium titanate (BST) thin-films has been built which shows the promise of using BST thin films in the design of tunable microwave devices. The phase shifter, fabricated as one monolithic assembly, consists of a 3dB coupler, meandered line inductors and tunable interdigital capacitors. A continuously variable phase shift range of more than 100° using the branch-line coupler was obtained at a center frequency of 2.95 GHz, and more than 90° phase shift over 200 MHz bandwidth with a bias voltage range from 0 V to 175 V. The phase shifter using the Lange coupler has over 700 MHz bandwidth centered at 2.2 GHz with a phase shift of more than 90° and an insertion loss less than 2 dB and return loss of greater than 14 dB, over a bias voltage range from 0 V to 160 V. The loss of the BST phase shifter presented in this work is on the order of other commercially available RF front-end components, such as bandpass filters and RF switches. This holds promise for the practical realization of smart antenna systems in cellular handsets and wireless LAN cards.


2007 ◽  
Vol 93 (1) ◽  
pp. 119-125 ◽  
Author(s):  
BARBARA MALIC ◽  
MISO VUKADINOVIC ◽  
IULIAN BOERASU ◽  
MIRA MANDELJC ◽  
ELENA ION ◽  
...  

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