Effect of measurement temperature on the dielectric and ferroelectric properties of various sol-gel derived PLZT thin films

AbstractGadolinium(Gd) doped ferroelectric lead lanthanum zirconate titanate (PLGZT 6/2/65/35) thin films were prepared by sol-gel spin coating technique. Fused silica and platinized silicon were used as substrates. Two-step pre-annealing heat treatment was employed to prepare crack free films. Annealing temperature was optimized though the x-ray diffraction studies to prepare films in single perovskite phase. Effects of Pb concentration and the seeding layer on the crystallization were studied. Optical transmission spectra were recorded and from this, refractive index, extinction coefficient and thickness were calculated for amorphous films on fused silica annealed at 400°C. In addition, the resultant films showed more than 60% transmission in the visible region. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. Ferroelectric properties of crystalline films were studied by plotting the P-E hysteresis loop.

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Compositional tailoring of the dielectric and ferroelectric properties of sol-gel derived PLZT thin films

Integrated Ferroelectrics ◽

10.1080/10584589508012271 ◽

1995 ◽

Vol 10 (1-4) ◽

pp. 131-143 ◽

Cited By ~ 6

Author(s):

G. Teowee ◽

M. P. Mebes ◽

C. D. Baertlein ◽

E. L. Quackenbush ◽

E. A. Kneer ◽

...

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Sol Gel ◽

Plzt Thin Films

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Layered lead zirconate titanate and lanthanum-doped lead zirconate titanate ceramic thin films

Journal of Materials Research ◽

10.1557/jmr.2002.0348 ◽

2002 ◽

Vol 17 (9) ◽

pp. 2379-2385 ◽

Cited By ~ 12

Author(s):

Todd Myers ◽

Parag Banerjee ◽

Susmita Bose ◽

Amit Bandyopadhyay

Keyword(s):

Thin Films ◽

Fatigue Resistance ◽

Lead Zirconate Titanate ◽

Photoelectron Spectroscopy ◽

Ferroelectric Properties ◽

Sol Gel ◽

Lead Zirconate ◽

Ceramic Thin Films ◽

Zirconate Titanate ◽

Plzt Thin Films

The physical layering of sol-gel-derived lead zirconate titanate (PZT) 52/48 and lanthanum-doped PZT (PLZT) 2/52/48 on platinized silicon substrates was investigated to determine if the ferroelectric properties and fatigue resistance could be influenced by different layering sequences. Monolithic thin films of PZT and PLZT were characterized to determine their ferroelectric properties. Sandwich structures of Pt/PZT/PLZT/PLZT/PZT/Au and Pt/PLZT/PZT/PZT/PLZT/Au and alternating structures of Pt/PZT/PLZT/PZT/PLZT/Au and Pt/PLZT/PZT/PLZT/PZT/Au were then fabricated and characterized. X-ray photoelectron spectroscopy depth profiles revealed that the layering sequence remained intact up to 700 °C for 45 min. It was found that the end layers in the multilayered films had a significant influence on the resulting hysteresis behavior and fatigue resistance. A direct correlation of ferroelectric properties and fatigue resistance can be made between the data obtained from the sandwiched structures and their end-layer monolithic thin film counterparts. Alternating structures also showed an improvement in the fatigue resistance while the polarization values remained between those for PZT and PLZT thin films.

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Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-012-0651-7 ◽

2012 ◽

Vol 23 (9) ◽

pp. 1711-1714 ◽

Cited By ~ 3

Author(s):

Changyong Liu ◽

Yiping Gong ◽

Dongyun Guo ◽

Chuanbin Wang ◽

Qiang Shen ◽

...

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Sol Gel ◽

Gel Method ◽

Sol Gel Method

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Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

Journal of Sol-Gel Science and Technology ◽

10.1007/s10971-012-2906-4 ◽

2012 ◽

Vol 64 (3) ◽

pp. 711-717 ◽

Cited By ~ 4

Author(s):

Ling Pei ◽

Ni Hu ◽

Gang Deng ◽

Yiwan Chen ◽

Yeguang Bie ◽

...

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Sol Gel ◽

Gel Method ◽

Sol Gel Method

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The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

MRS Proceedings ◽

10.1557/proc-493-131 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 8

Author(s):

Seung-Hyun Kim ◽

J. G. Hong ◽

J. C. Gunter ◽

H. Y. Lee ◽

S. K. Streiffer ◽

...

Keyword(s):

Thin Films ◽

Leakage Current ◽

Bottom Electrode ◽

Ferroelectric Properties ◽

Sol Gel ◽

Chemical Solution ◽

Electrode Structure ◽

Solution Deposition ◽

Pzt Thin Films ◽

Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

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Influence of Precursor Solutions on the Ferroelectric Properties of Sol-Gel-Derived Lanthanum-Modified Lead Titanate (PLT) Thin Films

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2004.00384.x ◽

2004 ◽

Vol 87 (3) ◽

pp. 384-390 ◽

Cited By ~ 14

Author(s):

S. Bhaskar ◽

S. B. Majumder ◽

E. R. Fachini ◽

R. S. Katiyar

Keyword(s):

Thin Films ◽

Lead Titanate ◽

Ferroelectric Properties ◽

Sol Gel

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Critical phenomena and phase transition in SOL-GEL derived ferroelectric PLZT thin films

Ferroelectrics ◽

10.1080/00150199408229530 ◽

1994 ◽

Vol 157 (1) ◽

pp. 347-352 ◽

Cited By ~ 5

Author(s):

Chianping Ye ◽

Paul Baude ◽

Dennis L. Polla

Keyword(s):

Thin Films ◽

Phase Transition ◽

Critical Phenomena ◽

Sol Gel ◽

Plzt Thin Films

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Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.1781 ◽

2011 ◽

Vol 197-198 ◽

pp. 1781-1784

Author(s):

Hua Wang ◽

Jian Li ◽

Ji Wen Xu ◽

Ling Yang ◽

Shang Ju Zhou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Si Substrates ◽

Gel Processing ◽

Coercive Electric Field ◽

Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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