Optical and electrical properties of the disordered composite semiconductor (GaAs)1−x (SiC2 : H)x, grown by metal-organic chemical vapour deposition

1986 ◽  
Vol 53 (5) ◽  
pp. 445-457 ◽  
Author(s):  
F. Maury ◽  
G. Constant ◽  
D. Jousse ◽  
A. Deneuville
1993 ◽  
Vol 3 (7) ◽  
pp. 739-742 ◽  
Author(s):  
Paul O'Brien ◽  
John R. Walsh ◽  
Anthony C. Jones ◽  
Simon A. Rushworth ◽  
Clive Meaton

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