Screening effect on ⟨110⟩ high-resolution electron microscopy image of compound semiconductors

1991 ◽  
Vol 63 (5) ◽  
pp. 1087-1100 ◽  
Author(s):  
K. Hiratsuka
1996 ◽  
Vol 11 (8) ◽  
pp. 1891-1896 ◽  
Author(s):  
X. Z. Li ◽  
K. Hiraga

A two-dimensional quasicrystal with fivefold symmetry and two large-unit-cell crystalline approximants in an Al–Co–Ni–Tb alloy, which were observed in previous studies, are suggested to be composed of the same kind of atom cluster. Some characteristics of the atom cluster can be deduced from a high-resolution electron microscopy image of the Al–Co–Ni–Tb quasicrystal when the image is associated with a fivefold aperiodic tiling. By using the cut-and-projection method, a quasiperiodic tiling generated by an irrational projection is proposed as an ideal quasilattice of the Al–Co–Ni–Tb quasicrystal; in the meantime, periodic tilings generated by a rational projection present the lattices of the crystalline approximants.


2001 ◽  
Vol 16 (8) ◽  
pp. 2179-2181
Author(s):  
Ming Zhang ◽  
Hongliang He ◽  
F. F. Xu ◽  
T. Sekine ◽  
T. Kobayashi ◽  
...  

A cubic silicon nitride embedded in amorphous SiO2 compound has been characterized by means of high-resolution analytical electron microscopy. The specimen was prepared from β–Si3N4 powders at a high pressure and temperature by shock wave compression. The typical high-resolution electron microscopy image from one small crystallite together with its diffractodiagram pattern indicated that the Si3N4 crystallites had a cubic symmetry. The electron energy loss spectrum from the small crystallite is very different from those of outside amorphous SiO2 phase and raw β–Si3N4 particles, and there are more N elements that were detected in this small crystallite than those in standard Si3N4.


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