High-resolution electron microscopy image simulation on a Cray 1S/2300 computer

1988 ◽  
Vol 10 (4) ◽  
pp. 369-372 ◽  
Author(s):  
R. Spycher ◽  
P. Stadelmann ◽  
P. Buffat ◽  
M. Flueli
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Image Simulation ◽  
Electron Microscopy Image ◽  
Resolution Electron ◽  
Microscopy Image

The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers

1999 ◽  
Vol 589 ◽  
Author(s):  
V. Potin ◽  
G. Nouet ◽  
P. Ruterana ◽  
R.C. Pond
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Anisotropic Elasticity ◽  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Image Simulation ◽  
Resolution Electron

AbstractThe studied GaN layers are made of mosaYc grains rotated around the c-axis by angles in the range 0-25°. Using high-resolution electron microscopy, anisotropic elasticity calculations and image simulation, we have analyzed the atomic structure of the edge threading dislocations. Here, we present an analysis of the Σ = 7 boundary using circuit mapping in order to define the Burgers vectors of the primary and secondary dislocations. The atomic structure of the primary ones was found to exhibit 5/7 and 8 atom cycles.

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