First-principles calculations on adiabatic potential surfaces of hydrogen atoms in polysilane

1992 ◽  
Vol 65 (3) ◽  
pp. 535-552 ◽  
Author(s):  
Kyozaburo Takeda ◽  
Kenji Shiraishi
Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 322
Author(s):  
Zhengxiong Su ◽  
Sheng Wang ◽  
Chenyang Lu ◽  
Qing Peng

Hydrogen plays a significant role in the microstructure evolution and macroscopic deformation of materials, causing swelling and surface blistering to reduce service life. In the present work, the atomistic mechanisms of hydrogen bubble nucleation in vanadium were studied by first-principles calculations. The interstitial hydrogen atoms cannot form significant bound states with other hydrogen atoms in bulk vanadium, which explains the absence of hydrogen self-clustering from the experiments. To find the possible origin of hydrogen bubble in vanadium, we explored the minimum sizes of a vacancy cluster in vanadium for the formation of hydrogen molecule. We show that a freestanding hydrogen molecule can form and remain relatively stable in the center of a 54-hydrogen atom saturated 27-vacancy cluster.


2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Guoliang Yu ◽  
Wence Ding ◽  
Xianbo Xiao ◽  
Xiaobo Li ◽  
Guanghui Zhou

Abstract We propose a planar model heterojunction based on α-borophene nanoribbons and study its electronic transport properties. We respectively consider three types of heterojunctions. Each type consists of two zigzag-edge α-borophene nanoribbons (Z αBNR), one is metallic with unpassivated or passivated edges by a hydrogen atom (1H-Z αBNR) and the other is semiconducting with the edge passivated by two hydrogen atoms (2H-Z αBNR) or a single nitrogen atom (N-Z αBNR). Using the first-principles calculations combined with the nonequilibrium Green’s function, we observe that the rectifying performance depends strongly on the atomic structural details of a junction. Specifically, the rectification ratio of the junction is almost unchanged when its left metallic ribbon changes from ZBNR to 1H-Z αBNR. However, its ratio increases from 120 to 240 when the right semiconducting one varies from 2H-Z αBNR to N-Z αBNR. This rectification effect can be explained microscopically by the matching degree the electronic bands between two parts of a junction. Our findings imply that the borophene-based heterojunctions may have potential applications in rectification nano-devices.


RSC Advances ◽  
2018 ◽  
Vol 8 (70) ◽  
pp. 39976-39982 ◽  
Author(s):  
E. Unsal ◽  
F. Iyikanat ◽  
H. Sahin ◽  
R. T. Senger

Herein, we carried out first-principles calculations based on density functional theory to investigate the effects of surface functionalization with hydrogen atoms on structural, dynamical and electronic properties of Cu2Si monolayer.


1997 ◽  
Vol 55 (20) ◽  
pp. 13783-13788 ◽  
Author(s):  
Ayumi Yokozawa ◽  
Yoshiyuki Miyamoto

2015 ◽  
Vol 93 (12) ◽  
pp. 1630-1637 ◽  
Author(s):  
De-Chun He ◽  
Han-Xiao Shao ◽  
Yong-Kai Wei

Pressure-induced vibrational and superconducting properties of lanthanum hydrides (LaH2 and LaH3) have been studied using first principles calculations. It is found that LaH2 and LaH3 are dynamically stable in the pressure ranges of 0–39 GPa and 4–35 GPa, respectively. The character of phonon dispersion curves for LaH2 and LaH3 is analyzed under pressure. The zone-center phonon mode eigen displacements that represent infrared and Raman activity are also obtained, which are essential to the analysis of spectral experiments. The calculations based on Bardeen–Cooper–Schrieffer theory indicate that LaH2 almost has no superconducting behavior even under pressure, in reasonable agreement with previous theoretical calculations and experiments. Whereas, LaH3 presents a considerable high superconducting transition temperature (Tc) at the onset of the face centered cubic structure, while it decreases exponentially under further compression up to 25 GPa and finally almost approaches zero. Further analysis indicates that the underlying mechanism of these two distinct superconducting behaviors are closely related to the hybridization between the HO-s state and La-d state. The mode Grüneisen parameters of two hydrides are also analyzed under 35 GPa, finding that the hydrogen atoms at octahedral sites are responsible for the superconducting properties of LaH3, and in fact, the unobserved superconducting behavior in LaH2 can be interpreted as the absence of hydrogen at octahedral sites compared with LaH3.


2012 ◽  
Vol 11 (06) ◽  
pp. 1217-1225 ◽  
Author(s):  
YAN MENG ◽  
CHUANJIN TIAN ◽  
FENGTING WANG ◽  
ZHIGANG WANG ◽  
MINGXING JIN ◽  
...  

The hyperconjugation effect on molecular structural stability is studied by performing first-principles calculations on the tert-butyl and its derived C 4 H n(n = 4–10) isomer structures. Four of the isomer structures with n = 7–10 were found to show hyperconjugation similar to that in the tert-butyl, with hyperconjugation orbital energies decreasing with the increase of the number of hydrogen atoms participating in the hyperconjugation (PIH). The distribution of charge carried by the PIH hydrogen atoms is uniform, which reveals a delocalization character in the electronic structures; and the PIH hydrogen atoms are found responsible for the main IR spectrum peak relating to C-H stretching vibration.


2004 ◽  
Vol 230-232 ◽  
pp. 81-92
Author(s):  
N. Martsinovich ◽  
A.L. Rosa ◽  
M.I. Heggie ◽  
Patrick R. Briddon

We use DFT calculations to investigate the problem of hydrogen aggregation in silicon. We study atomic structures of finite hydrogen aggregates containing four or more hydrogen atoms. Beyond four hydrogen atoms, complexes consisting of Si-H bonds are likely to form, rather than aggregates of H2 molecules, which are the most stable diatomic hydrogen complex. Our calculations show that the basic structural unit of such complexes is a hydrogenated dislocation loop, which is formed spontaneously by a structural transformation of two H∗2 complexes. Hydrogen-induced formation of dislocation loops may account for the experimental observations of dislocation loops in proton-implanted or hydrogen plasma-treated silicon. We indicate the routes leading from H∗2 aggregates and hydrogenated dislocation loops to twodimensional hydrogen-induced platelets. We discuss the effect of hydrogen-catalysed formation of dislocation loops on the plasticity of silicon.


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