Interface reactions in a chromium buffer layer deposited between stainless steel and a silicon substrate

Nitrogen plasma-assisted molecular beam epitaxy (PAMBE) deposited GaN thin films on (111) n-type silicon substrate with different thickness AlN buffer layers are investigated and distinguished by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman scattering. The thickness of AlN buffer layer ranged from 200 nm to 300 nm. Besides that, the electrical characteristics of the GaN thin film for ultraviolet detecting utilizations are studied by calculating the photo current/dark current ratio on a metal-semiconductor-metal (MSM) photodiode with and without the illumination of Hg-lamp source. The devices have been tested over room temperature (RT). The photocurrent analysis, together with the study of Schottky barrier height (SBH) development, ascertain that the principal mechanism of photo transport is thermionic emission. The photocurrent value is rigorously dependent on Schottky barrier height. The GaN/AlN(200 nm)/n-Si MSM photodiode produces the highest photo/dark current ratio for the lowest strain that consists of the GaN film grown on the AlN (200 nm) buffer layer.

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Self-Catalysed Vapor-Liquid-Solid Growth Mechanism of ZnO Nanowires Grown on Silicon Substrate Pre-Coated with ZnO Buffer Layer

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.307.64 ◽

2020 ◽

Vol 307 ◽

pp. 64-69

Author(s):

Naziha Jamaludin ◽

Samsudi Sakrani ◽

Kashif Tufail Chaudhary ◽

Jalil Ali ◽

Fairuz Diyana Ismail

Keyword(s):

Electron Microscopy ◽

Buffer Layer ◽

Growth Mechanism ◽

Silicon Substrate ◽

Zno Nanowires ◽

Vapor Liquid Solid ◽

Thermal Evaporation Method ◽

X Ray ◽

Zno Buffer Layer ◽

Vapor Liquid

The present article reports the growth mechanism of zinc oxide (ZnO) nanowires grown on silicon substrate pre-coated with ZnO buffer layer by thermal evaporation method. ZnO nanowires are grown for different growth time of 0, 30, 90 and 120 mins with controlled supply of Ar and O2 gas at 650 °C. The structural, morphological and crystallinity properties of ZnO nanowires are analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) spectroscopy, high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). FESEM images infers that, the nanowires growth is driven by self-catalysed vapor-liquid-solid mechanism, where the buffer layer serve as nucleation site. EDX spectra show the uniform composition and purity of ZnO nanowires. A strong (002) peak is detected in XRD spectra which indicates that the preferred growth orientation of the nanowires is toward the c-axis with a hexagonal wurtzite structure. The HRTEM microscopic graphs confirm the growth of nanowire along the preferred [0001] axis. Based on the analysis of grown ZnO nanowires, the probable growth mechanism is schematically presented.

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Constraint Effects on Thin Film Channel Cracking Behavior

Journal of Materials Research ◽

10.1557/jmr.2005.0317 ◽

2005 ◽

Vol 20 (9) ◽

pp. 2266-2273 ◽

Cited By ~ 42

Author(s):

Ting Y. Tsui ◽

Andrew J. McKerrow ◽

Joost J. Vlassak

Keyword(s):

Thin Film ◽

Residual Stress ◽

Buffer Layer ◽

Layer Thickness ◽

Silicon Substrate ◽

Shear Lag ◽

Shear Lag Model ◽

Lag Model ◽

Buffer Layer Thickness ◽

Cds Film

One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film. The results show that channel cracking is enhanced if the buffer layer is more compliant than the silicon substrate. Crack velocity increases with increasing buffer layer thickness and decreasing buffer layer stiffness. This is caused by a reduction of the constraint imposed by the substrate on the film and a commensurate increase in energy release rate. The degree of constraint is characterized experimentally as a function of buffer layer thickness and stiffness, and compared to the results of a simple shear lag model that was proposed previously. The results show that the shear lag model does not accurately predict the effect of the buffer layer.

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Single‐chamber,insituprocessing of superconducting YBa2Cu3O7−δthin films on stainless steel with yttria‐stabilized zirconia buffer layer

Journal of Applied Physics ◽

10.1063/1.348673 ◽

1991 ◽

Vol 69 (4) ◽

pp. 2410-2413 ◽

Cited By ~ 20

Author(s):

Ashok Kumar ◽

L. Ganapathi ◽

S. M. Kanetkar ◽

J. Narayan

Keyword(s):

Stainless Steel ◽

Buffer Layer ◽

Yttria Stabilized Zirconia ◽

Stabilized Zirconia ◽

Single Chamber

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Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.06.007 ◽

2007 ◽

Vol 307 (1) ◽

pp. 82-86 ◽

Cited By ~ 10

Author(s):

Zhengxin Liu ◽

Masato Osamura ◽

Teruhisa Ootsuka ◽

Ryo Kuroda ◽

Yasuhiro Fukuzawa ◽

...

Keyword(s):

Thin Film ◽

Stainless Steel ◽

Buffer Layer ◽

Stainless Steel Substrate ◽

Steel Substrate

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MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates

Физика и техника полупроводников ◽

10.21883/ftp.2018.05.45866.55 ◽

2018 ◽

Vol 52 (5) ◽

pp. 522

Author(s):

R.R. Reznik ◽

K.P. Kotlyar ◽

I.P. Soshnikov ◽

S.A. Kukushkin ◽

A.V. Osipov ◽

...

Keyword(s):

Silicon Carbide ◽

Buffer Layer ◽

Structural Properties ◽

Mole Fraction ◽

Silicon Substrate ◽

Mbe Growth ◽

Inas Nanowires ◽

First Time

AbstractThe possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

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Остаточные напряжения в несущей ленте AISI 310S на этапе нанесения буферного слоя YSZ при изготовлении ВТСП-2 провода

Журнал технической физики ◽

10.21883/jtf.2021.12.51761.169-21 ◽

2021 ◽

Vol 91 (12) ◽

pp. 1964

Author(s):

А.В. Иродова ◽

И.Д. Карпов ◽

В.С. Круглов ◽

В.Е. Крылов ◽

С.В. Шавкин ◽

...

Keyword(s):

Residual Stress ◽

Stainless Steel ◽

Neutron Diffraction ◽

Tensile Stress ◽

Buffer Layer ◽

Compressive Stress ◽

Rolling Plane ◽

Mechanical Polishing ◽

Steel Aisi ◽

Stainless Steel Aisi

Using neutron diffraction we determined internal residual stress in the stainless steel AISI 310S carrier tape with a thickness of 100 μm and a width of 4 mm after mechanical polishing and the ABAD deposition of the textured YSZ buffer layer. It is shown that mechanical polishing causes a slight distension of the tape in the rolling plane. After the deposition of the YSZ layer, uniform tensile stress of 70 MPa isotropic in the rolling plane was observed inside the tape. Calculations have shown that it results from relaxation of compressive stress acting on the surface of the tape in a layer several times thicker than the YSZ layer. It is assumed that the surface of the tape is plastically deformed during the YSZ deposition.

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