Influence of spin–orbit interaction, Zeeman effect and light polarisation on the electronic and optical properties of pseudo-elliptic quantum rings under magnetic field

2019 ◽  
Vol 100 (6) ◽  
pp. 749-767
Author(s):  
D. Bejan ◽  
C. Stan
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Zeeman Effect ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Quantum Rings ◽  
Spin Orbit Interaction ◽  
Electronic And Optical Properties ◽  
Elliptic Quantum

scholarly journals Tuning of few-electron states and optical absorption anisotropy in GaAs quantum rings

2017 ◽  
Vol 19 (44) ◽  
pp. 30048-30054 ◽  
Author(s):  
Zhenhua Wu ◽  
Jian Li ◽  
Jun Li ◽  
Huaxiang Yin ◽  
Yu Liu
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Orbit Interaction ◽  
Quantum Ring ◽  
Spin Orbit ◽  
Electron States ◽  
Quantum Rings ◽  
Spin Orbit Interaction ◽  
Electronic And Optical Properties ◽  
Rashba Spin

The electronic and optical properties of a GaAs quantum ring (QR) with few electrons in the presence of the Rashba spin–orbit interaction (RSOI) and the Dresselhaus spin–orbit interaction (DSOI) have been investigated theoretically.

Pressure dependent optical properties of quantum dot with spin orbit interaction and magnetic field

Optik ◽  
2019 ◽  
Vol 176 ◽  
pp. 278-286 ◽  
Author(s):  
Sheetal Antil ◽  
Manoj Kumar ◽  
Siddhartha Lahon ◽  
A.S. Maan
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

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