Measurement of In-Plane Thermal Conductivity of Ultrathin Films Using Micro-Raman Spectroscopy

2014 ◽  
Vol 18 (2) ◽  
pp. 183-193 ◽  
Author(s):  
Zhe Luo ◽  
Han Liu ◽  
Bryan T. Spann ◽  
Yanhui Feng ◽  
Peide Ye ◽  
...  
2010 ◽  
Vol 97 (26) ◽  
pp. 263107 ◽  
Author(s):  
Martin Soini ◽  
Ilaria Zardo ◽  
Emanuele Uccelli ◽  
Stefan Funk ◽  
Gregor Koblmüller ◽  
...  

2021 ◽  
Author(s):  
Taher Meydando ◽  
Nazli Donmezer

Abstract Micro-Raman spectroscopy has been preferred recently to measure the thermal conductivity of thin-films due to its nondestructive and non-contact nature. However, the thermal size effects originating from both localized heat generation from Raman laser and phonon scattering at boundaries may cause erroneous estimation of the thermal conductivities with the current approach. In this study, the gray phonon Boltzmann transport equation (BTE) is solved to improve the results of micro-Raman thermal conductivity measurements. Due to the frequency independence of single phonon mode in the gray BTE model, our method stays ahead of most theoretical methods in calculation time while giving adequate agreement with the literature data. The improved thermal conductivities are evaluated at various laser powers and focal lengths. Subsequently, the values of thermal conductivities are compared with a simple slab model in which the deduction of thermal conductivity in sub-micron thicknesses is calculated using reduced heat flux through the slab resulting from phonon directional energy densities. The results show that subsequent errors are present in measuring the thermal conductivity of relatively thick, thin films with this technique which are noticed by comparing with the simple slab model. Finally, a virtual micro-Raman thermography experiment is developed, and its validity is verified by the same slab model.


2021 ◽  
Vol 01 ◽  
Author(s):  
Manavendra P. Singh ◽  
Sumarlang Ryntathiang ◽  
Sivarama Krishnan ◽  
Pramoda K. Nayak

Background: Topological insulator (TI), Bi2Te3 is a new class of the quantum materials. Having ultralow dissipation surface states, TIs hold great promise toward different potential applications. Micro-Raman spectroscopy is a conventional and non-destructive technique, which has been widely used to characterize the structural and electronic properties of the thermoelectric materials. Objective: To study power dependent and temperature dependent Raman spectra of Bi2Te3 nano flakes on SiO2/Si substrate to estimate the temperature coefficient and thermal conductivity of these flakes for possible application of this material in thermoelectrics. Method: Bi2Te3 flakes of different thicknesses were mechanically exfoliated from high quality bulk Bi2Te3 crystal using scotch tape on 300 nm SiO2/ Si substrates. The power dependent and temperature dependent Raman spectra were acquired with the help of HORIBA LabRAM confocal micro-Raman system in a back scattering geometry. Result: . The observed power dependent and temperature dependent Raman spectra of Bi2Te3 nano flakes follow the same trend as discussed in various literatures. From temperature coefficient and power coefficient values, the in plane thermal conductivity has been estimated, which is found to be in the order of 10 2 W/m-K. The enhancement in the thermal conductivity suggests that the underlying substrate significantly affects the heat dissipation of the Bi2Te3 flake based on the coupling strength with Bi2Te3. Conclusion: This work provides a good platform to understand the role of substrate on the thermal conductivity of exfoliated Bi2Te3 nano flakes and this study can be extended to other substrates.


1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.


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