scholarly journals Near-field optics on flatland: from noble metals to van der Waals materials

2019 ◽  
Vol 4 (1) ◽  
pp. 1593051 ◽  
Author(s):  
Jiahua Duan ◽  
Yafeng Li ◽  
Yixi Zhou ◽  
Yuan Cheng ◽  
Jianing Chen
Nanoscale ◽  
2019 ◽  
Vol 11 (30) ◽  
pp. 14113-14117 ◽  
Author(s):  
Mengfei Xue ◽  
Qi Zheng ◽  
Runkun Chen ◽  
Lihong Bao ◽  
Shixuan Du ◽  
...  

Near-field imaging of mid-infrared waveguide in SnSe2 slabs promotes two-dimensional van der Waals materials as building blocks for integrated MIR chips.


2021 ◽  
Author(s):  
Daniel Grasseschi ◽  
Dario Bahamon ◽  
Francisco Maia ◽  
Ingrid Barcelos ◽  
Raul Freitas ◽  
...  

ACS Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 1196-1201 ◽  
Author(s):  
Daniel Wintz ◽  
Kundan Chaudhary ◽  
Ke Wang ◽  
Luis A. Jauregui ◽  
Antonio Ambrosio ◽  
...  

Author(s):  
Daniel Wintz ◽  
Alexander Y. Zhu ◽  
Ke Wang ◽  
Antonio Ambrosio ◽  
Rob Devlin ◽  
...  

2001 ◽  
Vol 56 (4) ◽  
pp. 517-522 ◽  
Author(s):  
D Peyrade ◽  
R Quidant ◽  
J.-C Weeber ◽  
A Dereux ◽  
G Lévêque ◽  
...  

2021 ◽  
pp. 2102917
Author(s):  
Ruijin Sun ◽  
Shifeng Jin ◽  
Jun Deng ◽  
Munan Hao ◽  
Xin Zhong ◽  
...  

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Qianfan Nie ◽  
Caifang Gao ◽  
Feng-Shou Yang ◽  
Ko-Chun Lee ◽  
Che-Yi Lin ◽  
...  

AbstractRecently, researchers have focused on optoelectronics based on two-dimensional van der Waals materials to realize multifunctional memory and neuron applications. Layered indium selenide (InSe) semiconductors satisfy various requirements as photosensitive channel materials, and enable the realization of intriguing optoelectronic applications. Herein, we demonstrate InSe photonic devices with different trends of output currents rooted in the carrier capture/release events under various gate voltages. Furthermore, we reported an increasing/flattening/decreasing synaptic weight change index (∆Wn) via a modulated gate electric field, which we use to imitate medicine-acting metaplasticity with effective/stable/ineffective features analogous to the synaptic weight change in the nervous system of the human brain. Finally, we take advantage of the low-frequency noise (LFN) measurements and the energy-band explanation to verify the rationality of carrier capture-assisted optoelectronics applied to neural simulation at the device level. Utilizing optoelectronics to simulate essential biomedical neurobehaviors, we experimentally demonstrate the feasibility and meaningfulness of combining electronic engineering with biomedical neurology.


2021 ◽  
Author(s):  
Yan Liang ◽  
Shiying Shen ◽  
Baibiao Huang ◽  
Ying Dai ◽  
Yandong Ma

2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional...


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