Temperature dependence of the unit cell of (TMTSF)2ReO4through the metal-insulator transition

1983 ◽  
Vol 16 (4) ◽  
pp. 691-698 ◽  
Author(s):  
D R P Guy ◽  
G S Boebinger ◽  
E A Marseglia ◽  
R H Friend ◽  
K Bechgaard
Keyword(s):  
Temperature Dependence ◽  
Unit Cell ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs

2007 ◽  
Vol 50 (3) ◽  
pp. 844 ◽  
Author(s):  
Sungyoul Choi ◽  
Bong-Jun Kim ◽  
Yong-Wook Lee ◽  
Hyun-Tak Kim ◽  
Jeongyong Choi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
P Type ◽  
Mn Doped

scholarly journals Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
M. Golalikhani ◽  
Q. Lei ◽  
R. U. Chandrasena ◽  
L. Kasaei ◽  
H. Park ◽  
...  
Keyword(s):  
Unit Cell ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Resistive characteristics of LSMO/LCMO bi-layers and temperature switching effect of magnetoresistance

2014 ◽  
Vol 28 (12) ◽  
pp. 1450096
Author(s):  
Blagoy S. Blagoev ◽  
Timerfayaz C. Nurgaliev ◽  
Irina E. Bineva ◽  
Elmira D. Vasileva ◽  
Vladimir Štrbik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Magnetron Sputtering ◽  
Temperature Dependence ◽  
Insulator Transition ◽  
Hysteretic Behavior ◽  
Switching Effect ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator

Ferromagnetic La 0.7 Sr 0.3 MnO 3/ La 0.7 Ca 0.3 MnO 3 ( LSMO / LCMO ) bi-layers of submicron thickness were deposited by magnetron sputtering on SrTiO 3 ( STO ) and Al 2 O 3 ( ALO ) substrates and temperature dependence of their resistances were investigated. The samples grown on ALO substrates demonstrated lower metal–insulator transition temperatures and higher resistances. The maximum magnetoresistance (MR) of bi-layer grown on STO substrate reached -56% at 184.6 K and magnetic field of 1 T. At temperatures below 150 K a "switching" of MR from negative to positive values (+ 1.7% at 110 K) and a hysteretic behavior of the resistance at low magnetic fields were observed as well.

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