The effect of post-hydrogen annealing and multilayer channel structure on nano-crystalline silicon thin film transistor performance

2010 ◽  
Vol 43 (19) ◽  
pp. 195102 ◽  
Author(s):  
Cheng-I Lin ◽  
Yean-Kuen Fang ◽  
Feng-Renn Juang ◽  
Yen-Ting Chiang ◽  
Pao-Tung Chen ◽  
...  
2008 ◽  
Vol 1116 ◽  
Author(s):  
Po-Chin Kuo ◽  
Abbas Jamshidi-Roudbari ◽  
Miltiadis K Hatalis

AbstractThis work investigates the effects of mechanical strain on electrical characteristics of polycrystalline thin film transistors (poly-Si TFTs). Poly-Si TFTs were fabricated on steel foil substrate and characterized under the strain ranging from -1.2% to 1.1% induced by bending. The electron mobility increased under tensile and decreased under compressive strain while that of the hole exhibited an opposite trend. For p-channel TFTs the normalized threshold voltage and subthreshold slope were a function of strain. In both n- and p-channel TFTs the off current decreased under tensile while it increased under compressive strain. The observed mobility trends in poly-Si TFTs are similar to those reported in single crystalline silicon devices.


2013 ◽  
Vol 63 (2) ◽  
pp. 20302 ◽  
Author(s):  
Eun Hye Lee ◽  
Su Woong Lee ◽  
Young Ju Eom ◽  
Hae Na Won ◽  
Jin Jang ◽  
...  

2010 ◽  
Vol 312 (14) ◽  
pp. 2145-2149 ◽  
Author(s):  
Se-Koo Kang ◽  
Min-Hwan Jeon ◽  
Jong-Yoon Park ◽  
Hyoung-Cheol Lee ◽  
Byung-Jae Park ◽  
...  

2008 ◽  
Vol 29 (11) ◽  
pp. 1229-1231 ◽  
Author(s):  
Feng-Tso Chien ◽  
Chin-Mu Fang ◽  
Chien-Nan Liao ◽  
Chii-Wen Chen ◽  
Ching-Hwa Cheng ◽  
...  

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