Nano-Crystalline Silicon-Based Bottom Gate Thin-Film Transistor Grown by LTPECVD With Hydrogen-Free He Diluted ${\hbox{SiH}} _{4}$

2013 ◽  
Vol 9 (7) ◽  
pp. 536-544 ◽  
Author(s):  
Chih-Hsien Cheng ◽  
Po-Sheng Wang ◽  
Chih-I Wu ◽  
Gong-Ru Lin
2010 ◽  
Vol 43 (19) ◽  
pp. 195102 ◽  
Author(s):  
Cheng-I Lin ◽  
Yean-Kuen Fang ◽  
Feng-Renn Juang ◽  
Yen-Ting Chiang ◽  
Pao-Tung Chen ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20865-20870 ◽  
Author(s):  
Dong-Gyu Kim ◽  
Jong-Un Kim ◽  
Jun-Sun Lee ◽  
Kwon-Shik Park ◽  
Youn-Gyoung Chang ◽  
...  

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.


2008 ◽  
Vol 29 (12) ◽  
pp. 1309-1311 ◽  
Author(s):  
Jang Yeon Kwon ◽  
Kyoung Seok Son ◽  
Ji Sim Jung ◽  
Tae Sang Kim ◽  
Myung Kwan Ryu ◽  
...  

2018 ◽  
Vol 65 (7) ◽  
pp. 2820-2826 ◽  
Author(s):  
Zhihe Xia ◽  
Lei Lu ◽  
Jiapeng Li ◽  
Hoi-Sing Kwok ◽  
Man Wong

2008 ◽  
Author(s):  
S. S. Park ◽  
W. H. Choi ◽  
D. H. Nam ◽  
K. I. Chai ◽  
H. D. Lee ◽  
...  

2016 ◽  
Vol 122 (6) ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
...  

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