Poly-crystalline Silicon Thin Film Transistor: a Two-dimensional Threshold Voltage Analysis using Green's Function Approach

2007 ◽  
Vol 7 (4) ◽  
pp. 287-298 ◽  
Author(s):  
Amit Sehgal ◽  
Tina Mangla ◽  
Mridula Gupta ◽  
R.S. Gupta
Keyword(s):  
Thin Film ◽  
Green’S Function ◽  
Green's Function ◽  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Thin Film Transistor ◽  
Function Approach ◽  
Two Dimensional ◽  
Silicon Thin Film

Amorpiious Silicon Thin Film Transistor and its Applications to Large-Area Electironics

1984 ◽  
Vol 33 ◽  
Author(s):  
H. C. Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Two Dimensional ◽  
Large Area ◽  
Silicon Thin Film

ABSTRACTIn this paper, the amorphous silicon thin film transistor (a-Si:HTFT) technology is reviewed. Its applications to both one- and two-dimensional large-area devices are described. The issues related to the fabrication of TFT arrays on large-area substrates are also discussed.

Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors

1991 ◽  
Vol 240 ◽  
Author(s):  
K. A. Mäder ◽  
A. Baldereschi
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Green’S Function ◽  
Electronic Properties ◽  
Green's Function ◽  
Tight Binding ◽  
Function Approach ◽  
Diamond Structure ◽  
Two Dimensional ◽  
Host Materials

ABSTRACTAn empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems.

The effect of post-hydrogen annealing and multilayer channel structure on nano-crystalline silicon thin film transistor performance

2010 ◽  
Vol 43 (19) ◽  
pp. 195102 ◽  
Author(s):  
Cheng-I Lin ◽  
Yean-Kuen Fang ◽  
Feng-Renn Juang ◽  
Yen-Ting Chiang ◽  
Pao-Tung Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystalline Silicon ◽  
Thin Film Transistor ◽  
Channel Structure ◽  
Silicon Thin Film ◽  
Hydrogen Annealing ◽  
Nano Crystalline

A variational–Green's function approach to theoretical treatment and applications of the capacitance of three-dimensional geometries

1982 ◽  
Vol 60 (2) ◽  
pp. 179-195 ◽  
Author(s):  
Andreas Mandelis
Keyword(s):  
Thin Film ◽  
Spatial Distribution ◽  
Green’S Function ◽  
Green's Function ◽  
Finite Thickness ◽  
Three Dimensional ◽  
Function Approach ◽  
Theoretical Treatment ◽  
One Dimensional

A combined variational–Green's function approach to the determination of the capacitance of various useful three-dimensional geometries is developed. This formalism leads to general, exact expressions for the capacitance, which can be used with all geometries provided the spatial distribution of the charge can be determined. In particular, the theory takes into account the finite thickness and unequal areas of the capacitor plates. Specific applications of the theory include circular capacitors with disc and ring-shaped charged plate geometries. Such geometries are commonly encountered in experimental set-ups for capacitive measurements of thin film thicknesses in the field of microelectronics. Numerical results indicate that the values of thin film thicknesses calculated via simplified one-dimensional formulae for the capacitance may be incorrect by more than 10%

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