Low-temperature solution-processed high-k ZrTiOx dielectric films for high-performance organic thin film transistors

2015 ◽  
Vol 210 ◽  
pp. 282-287 ◽  
Author(s):  
Qian Zhang ◽  
Guodong Xia ◽  
Wenwen Xia ◽  
Ji Zhou ◽  
Sumei Wang
Materials ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 6926-6934 ◽  
Author(s):  
Jaekyun Kim ◽  
Chang Park ◽  
Gyeongmin Yi ◽  
Myung-Seok Choi ◽  
Sung Park

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.


2010 ◽  
Vol 3 (10) ◽  
pp. 101601 ◽  
Author(s):  
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Koichi Sakaguchi ◽  
Masayuki Chikamatsu ◽  
Reiko Azumi ◽  
Kiyoshi Yase ◽  
...  

2018 ◽  
Vol 19 (2) ◽  
pp. 71-80 ◽  
Author(s):  
Chuan Liu ◽  
Xuying Liu ◽  
Takeo Minari ◽  
Masayuki Kanehara ◽  
Yong-Young Noh

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
Author(s):  
Ployrung Kesorn ◽  
Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
...  

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